Vanya Darakchieva

发表

Atomic layer deposition of Al2O3 on NF3-pre-treated graphene

Christian Wenger, Grzegorz Lupina, Johann W. Bartha, 2015, Microtechnologies for the New Millennium.

Effects of strain and composition on the lattice parameters and applicability of Vegard"s rule in Al-rich Al1-xInxN films grown on sapphire

Eric Feltin, Nicolas Grandjean, Lars Hultman, 2008 .

Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers

Mathias Schubert, Tanja Paskova, Plamen Paskov, 2003 .

Electronic and optical characterization of 2D Ti2C and Nb2C (MXene) thin films

Ingemar Persson, Per Eklund, Johanna Rosen, 2019, Journal of physics. Condensed matter : an Institute of Physics journal.

Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23)

Eric Feltin, Nicolas Grandjean, Bo Monemar, 2008 .

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Mathias Schubert, Detlef Hommel, Filip Tuomisto, 2006 .

Two-dimensional electron gas density in Al 1x In x N/AlN/GaN heterostructures "0.03x0.23…

Eric Feltin, Nicolas Grandjean, Bo Monemar, 2008 .

High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress

Mathias Schubert, Detlef Hommel, Filip Tuomisto, 2004 .

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Detlef Hommel, Edward A. Preble, M. Tutor, 2006 .

Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN

Igor A. Abrikosov, Lars Hultman, Katsumi Kishino, 2008 .

Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers

B. Arnaudov, Jens Birch, Tanja Paskova, 2005 .