Oliver Ambacher

发表

Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition

Matthias Seelmann-Eggebert, Michael Schlechtweg, Rudiger Quay, 2014, 2014 9th European Microwave Integrated Circuit Conference.

Broadband absorption and emission millimeter-wave spectroscopy between 220 and 325 GHz

Arnulf Leuther, Michael Schlechtweg, Oliver Ambacher, 2013, Defense, Security, and Sensing.

A novel broadband high-power source-pull/ load-pull concept for the HF- to UHF-range

Rudiger Quay, Oliver Ambacher, Florian A. Maier, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

A Dielectric-Filled Cavity-Backed Lens-Coupled Dipole Antenna at 100 GHz

Oliver Ambacher, Axel Tessmann, Alexander Dyck, 2019, 2019 IEEE Radio and Wireless Symposium (RWS).

Design, Realization, and Evaluation of a Riemann Pump in GaN Technology

Christian Friesicke, Oliver Ambacher, Markus Weiß, 2017, IEEE Microwave and Wireless Components Letters.

Active millimeter-wave imaging system for material analysis and object detection

Arnulf Leuther, Michael Schlechtweg, Oliver Ambacher, 2011, Security + Defence.

Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications

Arnulf Leuther, Hermann Massler, Rolf Aidam, 2012, Future Security.

Novel destructive-interference-envelope detector for high data rate ASK demodulation in wireless communication receivers

Oliver Ambacher, Fabian Thome, Stephan Maroldt, 2015, 2015 IEEE MTT-S International Microwave Symposium.

High-Gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power

Michael Mikulla, Rudiger Quay, Dirk Schwantuschke, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology

Rudiger Quay, Oliver Ambacher, Philippe Dennler, 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

Maximilian Dammann, Rüdiger Quay, Michael Mikulla, 2008, 2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop].

Performance of tri-gate AlGaN/GaN HEMTs

Frank Schwierz, Rüdiger Quay, Oliver Ambacher, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip

Dragan Maksimovic, Rudiger Quay, Oliver Ambacher, 2016, IEEE Workshop on Wide Bandgap Power Devices and Applications.

Tunable compound eye cameras

Stefan Sinzinger, Oliver Ambacher, Martin Hoffmann, 2010, Photonics Europe.

MOEMS tunable microlens made of aluminum nitride membranes

Stefan Sinzinger, Oliver Ambacher, Martin Hoffmann, 2013 .

Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes

Oliver Ambacher, Ulrich T. Schwarz, Klaus Köhler, 2014, Photonics West - Optoelectronic Materials and Devices.

Prospects and Limitations of Stacked-FET Approaches for Enhanced Output Power in Voltage-Controlled Oscillators

Oliver Ambacher, Fabian Thome, Stephan Maroldt, 2016, IEEE Transactions on Microwave Theory and Techniques.

A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells

Oliver Ambacher, Fabian Thome, 2017, 2017 IEEE MTT-S International Microwave Symposium (IMS).

A compact W-band LFMCW radar module with high accuracy and integrated signal processing

Michael Schlechtweg, Oliver Ambacher, Christian Zech, 2015, 2015 European Microwave Conference (EuMC).

Low-power wireless data transmitter MMIC with data rates up to 25 Gbit/s and 9.5mW power consumption using a 113 GHz carrier

Arnulf Leuther, Michael Schlechtweg, Oliver Ambacher, 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

Measurement setup for the analysis of broadband frequency-modulated signals

Michael Schlechtweg, Oliver Ambacher, Christian Zech, 2016, 2016 46th European Microwave Conference (EuMC).

Low noise amplifiers for MetOp-SG

Arnulf Leuther, Hermann Massler, Beatriz Aja, 2016, 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications.

InN as THz emitter excited at 1060 nm and 800 nm

Stefan Nolte, Gabor Matthäus, Oliver Ambacher, 2006, SPIE Photonics Europe.

W-band radiometer system with switching front-end for multi-load calibration

Arnulf Leuther, Hermann Massler, Oliver Ambacher, 2011, 2011 IEEE International Geoscience and Remote Sensing Symposium.

${W}$ -Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging

Arnulf Leuther, H.-P. Stulz, M. Schlechtweg, 2017, IEEE Transactions on Microwave Theory and Techniques.

High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF

Arnulf Leuther, Michael Schlechtweg, Michael Mikulla, 2013, 2013 European Microwave Integrated Circuit Conference.

Active load modules for W-band radiometer calibration

Michael Schlechtweg, Oliver Ambacher, Axel Tessmann, 2012, 2012 IEEE International Geoscience and Remote Sensing Symposium.

Active millimeter-wave imaging using a raster scanner

Arnulf Leuther, Michael Schlechtweg, Oliver Ambacher, 2009, Defense + Commercial Sensing.

Enabling compact MMIC-based frontends for millimeter-wave imaging radar and radiometry at 94 and 210 GHz

Arnulf Leuther, Hermann Massler, Michael Schlechtweg, 2008, Security + Defence.

A GaN-Based 10.1MHz Class-F-1 300 W Continuous Wave Amplifier Targeting Industrial Power Applications

Rudiger Quay, Oliver Ambacher, Florian A. Maier, 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

A W-band wireless communication transmitter utilizing a stacked-FET oscillator for high output power performance

Oliver Ambacher, Fabian Thome, 2016, 2016 IEEE MTT-S International Microwave Symposium (IMS).

With electroluminescence microcopy towards more reliable AlGaN/GaN transistors

Stefan Müller, Michael Mikulla, Joachim Wagner, 2015, SPIE NanoScience + Engineering.

Class-BJ power amplifier modes: The IMD behavior of reactive terminations

Rudiger Quay, Oliver Ambacher, Stephan Maroldt, 2013, 2013 European Microwave Integrated Circuit Conference.

Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature

Matthias Seelmann-Eggebert, Arnulf Leuther, Michael Schlechtweg, 2013, 2013 European Microwave Integrated Circuit Conference.

High-performance 60 GHz MMICs for wireless digital communication in 100 nm mHEMT technology

Arnulf Leuther, Hermann Massler, Michael Schlechtweg, 2011 .

A W-Band MMIC Radar System for Remote Detection of Vital Signs

Thomas Zwick, Arnulf Leuther, Hermann Massler, 2012 .

A low-power W-band receiver MMIC for amplitude modulated wireless communication up to 24 Gbit/s

Michael Schlechtweg, Oliver Ambacher, Fabian Thome, 2014, 2014 Asia-Pacific Microwave Conference.

Tunable cylindrical microlenses based on aluminum nitride membranes

Stefan Sinzinger, Oliver Ambacher, Martin Hoffmann, 2013, Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components.

Monolithic three-stage 6–18GHz high power amplifier with distributed interstage in GaN technology

Rudiger Quay, Oliver Ambacher, Stephan Maroldt, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs

Maximilian Dammann, Rüdiger Quay, Michael Mikulla, 2011, Microelectron. Reliab..

Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature

Matthias Seelmann-Eggebert, Frank Schafer, Arnulf Leuther, 2016, IEEE Transactions on Microwave Theory and Techniques.

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices

Maximilian Dammann, Rüdiger Quay, Michael Mikulla, 2014, Microelectron. Reliab..

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress

Oliver Ambacher, Rüdiger Quay, Vladimir Polyakov, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Demonstration of an RF front-end based on GaN HEMT technology

Oliver Ambacher, Axel Hülsmann, Erdin Ture, 2017, Defense + Security.

Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit

Matthias Seelmann-Eggebert, Beatriz Aja, Michael Schlechtweg, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz

Rüdiger Quay, Oliver Ambacher, Dirk Wiegner, 2010, IEICE Trans. Electron..

High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs

Maximilian Dammann, Rüdiger Quay, Michael Mikulla, 2015, 2015 IEEE International Reliability Physics Symposium.

Integrated reverse-diodes for GaN-HEMT structures

Michael Schlechtweg, Michael Mikulla, Rudiger Quay, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Watt-level non-uniform distributed 6–37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology

Michael Schlechtweg, Rudiger Quay, Oliver Ambacher, 2014, 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).

A compact, universal and cost-efficient antenna setup for mmW-radar applications

Michael Schlechtweg, Oliver Ambacher, Heiko Gulan, 2013, 2013 International Conference on Radar.

Spectroscopic Measurement of Material Properties Using an Improved Millimeter-Wave Ellipsometer Based on Metallic Substrates

Michael Schlechtweg, Jutta Kuhn, Oliver Ambacher, 2016, IEEE Transactions on Instrumentation and Measurement.

Wireless multi-gigabit data transmission using active MMIC components at 220 GHz

Arnulf Leuther, Hermann Massler, I. Kallfass, 2012 .

Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor

Rudiger Quay, Oliver Ambacher, Ingmar Kallfass, 2016, 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz

Matthias Seelmann-Eggebert, Arnulf Leuther, Hermann Massler, 2011, IEEE Journal of Solid-State Circuits.

Millimeter-wave monolithic integrated circuits for imaging and remote sensing at 140, 200, and 300 GHz

Arnulf Leuther, Hermann Massler, Michael Schlechtweg, 2009, Security + Defence.

InP DHBT-based 1:2 DEMUX IC operating at up to 120 Gbit/s

Michael Schlechtweg, Rachid Driad, Oliver Ambacher, 2009 .

RF-Noise Model Extraction Procedure for Distributed Multiport Models

Arnulf Leuther, Dirk Schwantuschke, Oliver Ambacher, 2019, 2019 12th German Microwave Conference (GeMiC).

On the determination of noise parameters of low-noise transistor devices

Matthias Seelmann-Eggebert, Hermann Massler, Beatriz Aja, 2015 .

An investigation of millimeter wave switches based on shunt transistors including SPDT SWITCH MMICs up to 300 GHz

Arnulf Leuther, Michael Schlechtweg, Oliver Ambacher, 2016, 2016 IEEE MTT-S International Microwave Symposium (IMS).

A compact 94 GHz FMCW radar MMIC based on 100 nm InGaAs mHEMT technology with integrated transmission signal conditioning

Arnulf Leuther, Michael Schlechtweg, Oliver Ambacher, 2013, 2013 European Microwave Conference.

A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses

Oliver Ambacher, Patrick Waltereit, Rüdiger Quay, 2019, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Dual-gate HEMT parameter extraction based on 2.5D multiport simulation of passive structures

Michael Schlechtweg, Rudiger Quay, Friedbert van Raay, 2016, 2016 11th European Microwave Integrated Circuits Conference (EuMIC).

Radar system components to detect small and fast objects

Arnulf Leuther, Michael Schlechtweg, Oliver Ambacher, 2015, Sensing Technologies + Applications.

A portable W-band radar system for enhancement of infrared vision in fire fighting operations

Michael Schlechtweg, Michael Ulrich, Oliver Ambacher, 2016, Security + Defence.

Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applications

Oliver Ambacher, Volker Cimalla, Ralf Stephan, 2006 .

Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy

Ana Cremades, Oliver Ambacher, Martin Stutzmann, 2004 .

Q- and E-band amplifier MMICs for satellite communication

Matthias Seelmann-Eggebert, Arnulf Leuther, Beatriz Aja, 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

Material characterization using a compact W-band ellipsometer

Michael Schlechtweg, Oliver Ambacher, Christian Zech, 2016, 2016 46th European Microwave Conference (EuMC).

Piezoelectric properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy

Oliver Ambacher, Volker Cimalla, D. Dontsov, 2006 .

20 nm Metamorphic HEMT technology for terahertz monolithic integrated circuits

Matthias Seelmann-Eggebert, Arnulf Leuther, Michael Schlechtweg, 2014, 2014 9th European Microwave Integrated Circuit Conference.

AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

Lester F. Eastman, Oliver Ambacher, James R. Shealy, 1999 .

Group III-nitride-based gas sensors for combustion monitoring

Martin Eickhoff, Oliver Ambacher, Martin Stutzmann, 2002 .

SiC-based FET for detection of NOx and O2 using InSnOx as a gate material

Vinayak Tilak, Oliver Ambacher, Volker Cimalla, 2007 .

Undoped AlGaN/GaN HEMTs for microwave power amplification

Lester F. Eastman, Oliver Ambacher, William J. Schaff, 2001 .

Nanoelectromechanical devices for sensing applications

Oliver Ambacher, Volker Cimalla, K. Brueckner, 2007 .

Influence of metal thickness to sensitivity of Pt/GaN Schottky diodes for gas sensing applications

Vinayak Tilak, Oliver Ambacher, Volker Cimalla, 2003 .

8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology

Rudiger Quay, Dirk Schwantuschke, Oliver Ambacher, 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

Oliver Ambacher, Martin Stutzmann, Nils Weimann, 1999 .

Near‐UV LEDs for integrated InO‐based ozone sensors

Joachim Wagner, Oliver Ambacher, Volker Cimalla, 2010 .

Growth of cubic InN on r-plane sapphire

Oliver Ambacher, Volker Cimalla, Hai Lu, 2003 .

Investigation of dielectric properties of multilayer structures consisting of homogeneous plastics and liquid solutions at 75–110 GHz

Michael Schlechtweg, Oliver Ambacher, Christian Zech, 2015 .

Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

Oliver Ambacher, Martin Stutzmann, Martin S. Brandt, 1996 .

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications

Martin Eickhoff, Oliver Ambacher, Martin Stutzmann, 2003 .

Anisotropy of the dielectric function for wurtzite InN

Oliver Ambacher, Volker Cimalla, Friedhelm Bechstedt, 2004 .

Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology

Arnulf Leuther, Hermann Massler, Michael Schlechtweg, 2014, 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Optical constants of epitaxial AlGaN films and their temperature dependence

Oliver Ambacher, Martin Stutzmann, H. Angerer, 1997 .

Comparison of normal and inverse poly(3-hexylthiophene)/fullerene solar cell architectures

Oliver Ambacher, Gernot Ecke, Maher Al-Ibrahim, 2005 .

GaN‐based high voltage transistors for efficient power switching

Michael Mikulla, Rudiger Quay, Detlef Peschel, 2013 .

Integration of thin-film-fracture-based nanowires into microchip fabrication.

Rainer Adelung, Oliver Ambacher, Volker Cimalla, 2008, Small.

Pt/GaN schottky diodes for hydrogen gas sensors

Vinayak Tilak, Oliver Ambacher, Volker Cimalla, 2006 .

Sub-MHz-Linewidth 200-mW Actively Stabilized 2.3-μm Semiconductor Disk Laser

Joachim Wagner, Oliver Ambacher, Christian Manz, 2011, IEEE Photonics Technology Letters.

Development of a high transconductance GaN MMIC technology for millimeter wave applications

Arnulf Leuther, Oliver Ambacher, Stephan Maroldt, 2011 .

Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001)

Oliver Ambacher, Martin Stutzmann, H. Angerer, 1998 .

Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency

Matthias Seelmann-Eggebert, Wolfgang Bronner, Michael Schlechtweg, 2009 .

GaN/SiC heterojunction bipolar transistors

Lester F. Eastman, Oliver Ambacher, Choudhury Jayant Praharaj, 2000 .

Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50nm InGaAs mHEMT technology

Arnulf Leuther, Hermann Massler, Michael Schlechtweg, 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

Ionization Energy and Electron Affinity of Clean and Oxidized Al x Ga 1−x N(0001) Surfaces

Oliver Ambacher, Martin Stutzmann, W. Mönch, 2001 .

Growth and applications of Group III-nitrides

Oliver Ambacher, O. Ambacher, 1998 .

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

Oliver Ambacher, Martin Stutzmann, M. Schuster, 1998 .

Growth of AlN nanowires by metal organic chemical vapour deposition

Oliver Ambacher, Volker Cimalla, D. Cengher, 2006 .

High-electron-mobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications

Oliver Ambacher, Martin Stutzmann, O. Ambacher, 2001 .

Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures

W. Bronner, Oliver Ambacher, P. Waltereit, 2009 .

Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications

Arnulf Leuther, Michael Mikulla, Dirk Schwantuschke, 2012 .

Raman spectra of isotopic GaN

Oliver Ambacher, Martin Stutzmann, Friedhelm Bechstedt, 1997 .

High-Gain Millimeter-Wave AlGaN/GaN Transistors

Michael Mikulla, Rudiger Quay, Dirk Schwantuschke, 2013, IEEE Transactions on Electron Devices.

Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation

Martin Walther, Rachid Driad, Oliver Ambacher, 2014, IEEE Journal of Selected Topics in Quantum Electronics.

Laser-Processing for Patterned and Free-Standing Nitride Films

Oliver Ambacher, Martin Stutzmann, H. Angerer, 1997 .

A Transmitter System-in-Package at 300 GHz With an Off-Chip Antenna and GaAs-Based MMICs

Arnulf Leuther, Oliver Ambacher, Axel Tessmann, 2019, IEEE Transactions on Terahertz Science and Technology.

Photon stimulated ozone sensor based on indium oxide nanoparticles II: Ozone monitoring in humidity and water environments

Oliver Ambacher, Volker Cimalla, Klaus Köhler, 2012 .

Spectroscopic ellipsometry measurements of AlxGa1−xN in the energy range 3–25 eV

Oliver Ambacher, H. Angerer, M. Cardona, 1998 .

Multi-Stage Cascode in High-Voltage A1GaN/GaN-on-Si Technology

Oliver Ambacher, Patrick Waltereit, Rüdiger Quay, 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

AlGaN/GaN epitaxy and technology

Rolf Aidam, Wolfgang Bronner, Lutz Kirste, 2010, International Journal of Microwave and Wireless Technologies.

Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

Oliver Ambacher, Martin Stutzmann, H. Angerer, 1997 .

Vertical Buffer Leakage and Temperature Effects on the Breakdown Performance of GaN/AlGaN HEMTs on Si Substrate

Michael Mikulla, Oliver Ambacher, Christian Manz, 2015 .

A 92 GHz GaN HEMT voltage-controlled oscillator MMIC

Rudiger Quay, Friedbert van Raay, Dirk Schwantuschke, 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

Surface properties of stoichiometric and defect-rich indium oxide films grown by MOCVD

Oliver Ambacher, Volker Cimalla, Marcel Himmerlich, 2012 .

Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

Oliver Ambacher, Martin Stutzmann, Robert P. Vaudo, 1999 .

NOx sensing properties of In2O3 thin films grown by MOCVD

Oliver Ambacher, Volker Cimalla, O. Ambacher, 2008 .

Investigations of Active Antenna Doherty Power Amplifier Modules Under Beam-Steering Mismatch

Christian Fager, Oliver Ambacher, Rüdiger Quay, 2018, IEEE Microwave and Wireless Components Letters.

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

Lester F. Eastman, Martin Eickhoff, James S. Speck, 2003 .

2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz.

Joachim Wagner, Oliver Ambacher, Christian Manz, 2011, Optics letters.

A 183 GHz Metamorphic HEMT Low-Noise Amplifier With 3.5 dB Noise Figure

Arnulf Leuther, Beatriz Aja, Michael Schlechtweg, 2015, IEEE Microwave and Wireless Components Letters.

Development of a Silicon-Only Capacitive Dew Point Sensor

Oliver Ambacher, Uma Krishnamoorthy, O. Ambacher, 2017, IEEE Sensors Journal.

W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology

Oliver Ambacher, Rüdiger Quay, Fabian Thome, 2018, 2018 11th German Microwave Conference (GeMiC).

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Lester F. Eastman, Oliver Ambacher, Martin Stutzmann, 1999 .

Gas sensitive GaN/AlGaN-heterostructures

Martin Eickhoff, Oliver Ambacher, Martin Stutzmann, 2002 .

Micro-electromechanical systems based on 3C-SiC/Si heterostructures

Matthias Hein, Oliver Ambacher, Volker Cimalla, 2005 .

Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures

Andreas Schober, Oliver Ambacher, Volker Cimalla, 2008 .

Multilayer material analysis using an active millimeter wave imaging system

Arnulf Leuther, Michael Schlechtweg, Joachim Wagner, 2013, 2013 14th International Radar Symposium (IRS).

GaN-based heterostructures for sensor applications

Martin Eickhoff, Oliver Ambacher, Martin Stutzmann, 2002 .

Wireless sub-THz communication system with high data rate enabled by RF photonics and active MMIC technology

Thomas Zwick, Arnulf Leuther, David Hillerkuss, 2014 .

Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

Lester F. Eastman, Oliver Ambacher, Martin Stutzmann, 2000 .

Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

Oliver Ambacher, Martin Stutzmann, O. Ambacher, 2000 .

Energy gap and optical properties of InxGa1–xN

Oliver Ambacher, Friedhelm Bechstedt, V. Yu. Davydov, 2003 .

Ion‐Induced Modulation of Channel Currents in AlGaN/GaN High‐Electron‐Mobility Transistors

Oliver Ambacher, Martin Stutzmann, Gerhard Müller, 2001 .

Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications

Matthias Seelmann-Eggebert, Rudiger Quay, Friedbert van Raay, 2011, 2011 IEEE MTT-S International Microwave Symposium.

Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications

Michael Mikulla, Joachim Wagner, Oliver Ambacher, 2014 .

The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films

Lutz Kirste, Oliver Ambacher, Volker Cimalla, 2016 .

Nanowire-based electromechanical biomimetic sensor

Mike Stubenrauch, Arne Albrecht, Oliver Ambacher, 2007 .

Effects of solvent and annealing on the improved performance of solar cells based on poly(3-hexylthiophene): Fullerene

Oliver Ambacher, Gerhard Gobsch, Maher Al-Ibrahim, 2005 .

Broadband High-Power W-Band Amplifier MMICs Based on Stacked-HEMT Unit Cells

Arnulf Leuther, Michael Schlechtweg, Oliver Ambacher, 2018, IEEE Transactions on Microwave Theory and Techniques.

Photoreduction and oxidation behavior of In2O3 nanoparticles by metal organic chemical vapor deposition

Oliver Ambacher, Volker Cimalla, Vadim Lebedev, 2007 .

NOx sensing properties of In2O3 nanoparticles prepared by metal organic chemical vapor deposition

Oliver Ambacher, Volker Cimalla, O. Ambacher, 2008 .

Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements

Oliver Ambacher, Martin Stutzmann, H. Angerer, 1998 .

Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs

Arnulf Leuther, Hermann Massler, Michael Schlechtweg, 2017, 2017 IEEE MTT-S International Microwave Symposium (IMS).

Optical Process for Liftoff of Group III-Nitride Films

Oliver Ambacher, Martin Stutzmann, M. K. Kelly, 1997 .

AlGaN-Based Bragg Reflectors

Oliver Ambacher, Martin Stutzmann, H. Angerer, 1997 .

Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators

Oliver Ambacher, Volker Cimalla, Ralf Stephan, 2008 .

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

Jacek A. Majewski, Lester F. Eastman, Martin Eickhoff, 2002 .

Micro‐ and nano‐electromechanical resonators based on SiC and group III‐nitrides for sensor applications

Oliver Ambacher, Volker Cimalla, Ralf Stephan, 2011 .

Piezoelectric properties of polycrystalline AlN thin films for MEMS application

Oliver Ambacher, Volker Cimalla, D. Dontsov, 2006 .

Compact quasi-optical focusing system for a 94 GHz FMCW radar

Michael Schlechtweg, Oliver Ambacher, Christian Zech, 2014, 2014 15th International Radar Symposium (IRS).

Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-Chip

Oliver Ambacher, Patrick Waltereit, Rüdiger Quay, 2017, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency

Wolfgang Bronner, Michael Mikulla, Oliver Ambacher, 2010 .

Advanced building blocks for (Sub-)millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology

Arnulf Leuther, Hermann Massler, Michael Schlechtweg, 2016, 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications.

Growth of GaNAlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium

Oliver Ambacher, Martin Stutzmann, W. Rieger, 1996 .

Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si

Lutz Kirste, Michael Mikulla, Rachid Driad, 2013 .

Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy

Oliver Ambacher, Martin Stutzmann, H. Angerer, 1996 .

Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes

Martin Eickhoff, Oliver Ambacher, Martin Stutzmann, 2004 .

Optical patterning of GaN films

G. Groos, Oliver Ambacher, Martin Stutzmann, 1996 .

Advanced mHEMT Technologies for Space Applications

Arnulf Leuther, I. Kallfass, Oliver Ambacher, 2009 .

The Metamorphic HEMT and its Applications in Remote Sensing

Matthias Seelmann-Eggebert, Arnulf Leuther, I. Kallfass, 2009 .

Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films

Ana Cremades, Oliver Ambacher, Martin Stutzmann, 2001 .

Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology

Rudiger Quay, Oliver Ambacher, Patrick Waltereit, 2017 .

Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures

Oliver Ambacher, Vincenzo Fiorentini, O. Ambacher, 2002 .

MOCVD‐Epitaxy on Free‐Standing HVPE‐GaN Substrates

Oliver Ambacher, Martin Stutzmann, M. K. Kelly, 1999 .

Suspended nanowire web

Mike Stubenrauch, Oliver Ambacher, Volker Cimalla, 2007 .

Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

Matthias Seelmann-Eggebert, Michael Mikulla, Jutta Kuhn, 2010, International Journal of Microwave and Wireless Technologies.

Corrugated piezoelectric membranes for energy harvesting from aperiodic vibrations

Lutz Kirste, Oliver Ambacher, Volker Cimalla, 2013 .

Detailed analysis of the dielectric function for wurtzite InN and In‐rich InAlN alloys

P. Schley, Oliver Ambacher, Volker Cimalla, 2006 .

High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

Birte-Julia Godejohann, Rolf Aidam, Rudiger Quay, 2016, IEEE Journal of the Electron Devices Society.

Nanotechnology for SAW devices on AlN epilayers

Martin Eickhoff, Oliver Ambacher, Jesus Grajal, 2002 .

The Mn3+/2+ acceptor level in group III nitrides

Oliver Ambacher, Martin Stutzmann, Martin S. Brandt, 2002 .

High Power, Broadband, Linear, Solid State Amplifier.

Lester F. Eastman, Oliver Ambacher, V. Tilak, 1999 .

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

Wolfgang Bronner, Michael Mikulla, Oliver Ambacher, 2010 .

A 300 GHz microstrip multilayered antenna on quartz substrate

Arnulf Leuther, Michael Schlechtweg, Oliver Ambacher, 2018, 2018 International Workshop on Antenna Technology (iWAT).

Slew rate control of a 600 V 55 mΩ GaN cascode

Lothar Frey, Thomas Heckel, Oliver Ambacher, 2016, 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

Oliver Ambacher, Martin Stutzmann, M. K. Kelly, 2000 .

Piezoresistivity of AlxGa1−xN layers and AlxGa1−xN/GaN heterostructures

Martin Eickhoff, Oliver Ambacher, G. Krötz, 2001 .

Analysis and Development of Submillimeter-Wave Stacked-FET Power Amplifier MMICs in 35-nm mHEMT Technology

Arnulf Leuther, Hermann Massler, Christian Friesicke, 2018, IEEE Transactions on Terahertz Science and Technology.

Electron affinity of AlxGa1−xN(0001) surfaces

Oliver Ambacher, Martin Stutzmann, W. Mönch, 2001 .

Group-III-Nitride Based Gas Sensing Devices

Oliver Ambacher, Martin Stutzmann, J. Schalwig, 2001 .

W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology

Arnulf Leuther, Oliver Ambacher, Fabian Thome, 2019, 2019 IEEE MTT-S International Microwave Symposium (IMS).

Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors

Michael Mikulla, Joachim Wagner, Rudiger Quay, 2012 .

Electrostatically coupled vibration modes in unimorph complementary microcantilevers

Oliver Ambacher, Volker Cimalla, B. Raynor, 2012 .

Excitonic contribution to the optical absorption in zinc-blende III-V semiconductors

Oliver Ambacher, Gerhard Gobsch, S. Shokhovets, 2006 .

Wetting Behaviour of GaN Surfaces with Ga‐ or N‐Face Polarity

Martin Eickhoff, Oliver Ambacher, Martin Stutzmann, 2001 .

Highly Isolating and Broadband Single-Pole Double-Throw Switches for Millimeter-Wave Applications Up to 330 GHz

Oliver Ambacher, Fabian Thome, O. Ambacher, 2018, IEEE Transactions on Microwave Theory and Techniques.

Strain- and pressure-dependent RF response of microelectromechanical resonators for sensing applications

Oliver Ambacher, Volker Cimalla, Ralf Stephan, 2007 .

Conduction-band dispersion relation and electron effective mass in III-V and II-VI zinc-blende semiconductors

Oliver Ambacher, Gerhard Gobsch, S. Shokhovets, 2007 .

AlGaN/GaN power amplifiers for ISM applications

Oliver Ambacher, F. Benkhelifa, Richard Reiner, 2012 .

Photon stimulated sensor based on indium oxide nanoparticles I: Wide-concentration-range ozone monitoring in air

Oliver Ambacher, Volker Cimalla, Klaus Köhler, 2011 .

Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub

Christian Friesicke, Dirk Schwantuschke, Oliver Ambacher, 2018, IEEE Transactions on Microwave Theory and Techniques.

243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology

Arnulf Leuther, Hermann Massler, Michael Schlechtweg, 2014, International Journal of Microwave and Wireless Technologies.

Hydrogen response mechanism of Pt-GaN Schottky diodes

Martin Eickhoff, Oliver Ambacher, Martin Stutzmann, 2002 .

GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz

Rudiger Quay, Oliver Ambacher, Dirk Wiegner, 2011, International Journal of Microwave and Wireless Technologies.

Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors

Josef Zweck, Oliver Ambacher, Wolfgang Gebhardt, 2000 .

100 Gbit/s wireless link with mm-wave photonics

Thomas Zwick, David Hillerkuss, Rene Schmogrow, 2013, 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC).

Relation between absorption and crystallinity of poly(3-hexylthiophene)/fullerene films for plastic solar cells

Oliver Ambacher, Gerhard Gobsch, Maher Al-Ibrahim, 2006 .