R. Schwindt

DC, RF, and Microwave Noise Performances of

Ilesanmi Adesida, Wu Lu, Edwin L. Piner, 2002 .

A comparative study of surface passivation on AlGaN/GaN HEMTs

Ilesanmi Adesida, V. Kumar, Edwin L. Piner, 2002 .

Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers

I. Adesida, V. Kumar, R. Schwindt, 2004, IEEE Microwave and Wireless Components Letters.

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

G. Simin, I. Adesida, V. Kumar, 2002, IEEE Electron Device Letters.

High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz

Ilesanmi Adesida, V. Kumar, R. Schwindt, 2003 .

Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates

Ilesanmi Adesida, V. Kumar, R. Birkhahn, 2004 .

AlGaN/GaN HEMT‐based fully monolithic X‐band low noise amplifier

Ilesanmi Adesida, O. Aktas, V. Kumar, 2005 .

Monolithic integration of InAlAs/InGaAs enhancement and depletion (E/D)-mode metamorphic HEMTs on GaAs substrate

I. Adesida, G. Cueva, R. Schwindt, 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561).

Spectral domain analysis of three symmetric coupled lines and application to a new bandpass filter

Cam Nguyen, R. Schwindt, C. Nguyen, 1994 .