S. Morvan

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

J. Mazurier, M. Vinet, P. Javorka, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Efficiency of mechanical stressors in Planar FDSOI n and p MOSFETs down to 14nm gate length

J. Mazurier, O. Faynot, G. Ghibaudo, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Improvements in low temperature (<625°C) FDSOI devices down to 30nm gate length

X. Garros, J. Mazurier, O. Faynot, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

Gate-last integration on planar FDSOI MOSFET: Impact of mechanical boosters and channel orientations

X. Garros, O. Faynot, F. Andrieu, 2013, 2013 IEEE International Electron Devices Meeting.