J. Kluth

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

J. Mazurier, M. Vinet, P. Javorka, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

J. Gill, D. Mocuta, D. Greenlaw, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Scaling of high-k dielectrics towards sub-1nm EOT

S. De Gendt, D. Pique, S. Van Elshocht, 2003, 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672).

Issues, achievements and challenges towards integration of high-k dielectrics

Richard Carter, Guido Groeseneken, L. Pantisano, 2002 .