Mike Leszczynski

发表

A multi-wavelength (u.v. to visible) laser system for early detection of oral cancer

Piotr Perlin, S. P. Najda, Peter A. Mossey, 2015, Photonics West - Biomedical Optics.

Blue lasers — the latest in 30 years of successes

Mike Leszczynski, 2002 .

Applications of Single Frequency Blue Lasers

Martin Knapp, Amit Yadav, Anthony E. Kelly, 2019, 2019 21st International Conference on Transparent Optical Networks (ICTON).

Advances in AlGaInN laser diode technology for defence, security and sensing applications

L. Marona, Piotr Perlin, S. P. Najda, 2016, Security + Defence.

Advances in GaN laser diodes for quantum sensors and optical atomic clocks

Stephen P. Najda, Piotr Perlin, Thomas J. Slight, 2020, OPTO.

Visible light communications using a directly modulated 422 nm GaN laser diode.

Mingming Tan, Scott Watson, Piotr Perlin, 2013, Optics letters.

Secondary ions mass spectroscopy measurements of dopant impurities in highly stressed InGaN laser diodes

Stephen P. Najda, Lucja Marona, Piotr Perlin, 2011 .

Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

Amit Yadav, Anthony E. Kelly, Scott Watson, 2018, Applied Physics Express.

Picosecond Z-scan measurements on bulk GaN crystals

Piotr Perlin, Arūnas Krotkus, A. Stalnionis, 2001 .

Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes

Piotr Perlin, Grzegorz Targowski, Robert Czernecki, 2007 .

GaN-based distributed feedback laser diodes for optical communications

Amit Yadav, Anthony E. Kelly, Scott Watson, 2019, Fourth International Conference on Applications of Optics and Photonics.

Development of the Nitride Laser Diode Arrays for Video and Movie Projectors

Robert P. Sarzała, Piotr Perlin, S. P. Najda, 2016 .

Graded-index separate confinement heterostructure InGaN laser diodes

Ewa Grzanka, Tomasz Czyszanowski, Piotr Perlin, 2013 .

Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Petr G. Eliseev, P. Perlin, Lucja Marona, 2006 .

Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

Sandor Kokenyesi, R. Bohdan, Witold Trzeciakowski, 2005 .

High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering

Chennupati Jagadish, Hark Hoe Tan, Tadeusz Suski, 2000 .

Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

Piotr Perlin, Grzegorz Targowski, Robert Czernecki, 2011 .

A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

P. Adamiec, F. Dybala, Artem Bercha, 2004 .

60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

P. Perlin, Grzegorz Nowak, Marcin Siekacz, 2006 .

Multi-gigabit data transmission using a directly modulated GaN laser diode for visible light communication through plastic optical fiber and water

Malcolm A. Watson, Henry White, Scott Watson, 2015, 2015 IEEE Summer Topicals Meeting Series (SUM).

Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate

Ulrich T. Schwarz, Piotr Perlin, Robert Czernecki, 2007 .

Properties of InGaN blue laser diodes grown on bulk GaN substrates

Grzegorz Nowak, Piotr Perlin, Robert Czernecki, 2005 .

Thermal expansion of bulk and homoepitaxial GaN

Detlef Hommel, Mike Leszczynski, V. Kirchner, 2000 .

Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

Z. R. Wasilewski, P. Wisniewski, Piotr Perlin, 2005 .

Fabrication and properties of GaN-based lasers

Grzegorz Nowak, Lucja Marona, Piotr Perlin, 2008 .

Lattice dilation by free electrons in heavily doped GaAs:Si

Jadwiga Bak-Misiuk, J. Marczewski, Mike Leszczynski, 1995 .

High-power laser structures grown on bulk GaN crystals

Piotr Perlin, Grzegorz Targowski, Izabella Grzegory, 2004 .

Magnetic resonance studies of defects in GaN with reduced dislocation densities

S. S. Park, Richard J. Molnar, Evan R. Glaser, 2001 .

Cavity suppression in nitride based superluminescent diodes

Piotr Perlin, Szymon Stanczyk, Robert Czernecki, 2012 .

GaAIAs Lattice Parameter Dependence on Free Electron Concentration

Jadwiga Bak-Misiuk, Mike Leszczynski, J. Trela, 1995 .

High pressure fabrication and processing of GaN:Mg

T. Laine, Izabella Grzegory, Sylwester Porowski, 1999 .

InGaN Laser Diode Degradation. Surface and Bulk Processes

P. Wisniewski, Piotr Perlin, Robert Czernecki, 2009 .

Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure

Jürgen Härtwig, A. Misiuk, Mike Leszczynski, 1996 .

Nitride‐based quantum structures and devices on modified GaN substrates

Grzegorz Nowak, Piotr Perlin, Grzegorz Targowski, 2009 .