Hisashi Shichijo

发表

280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS

Ehsan Afshari, Ruonan Han, Yaming Zhang, 2012, 2012 IEEE International Solid-State Circuits Conference.

Hisashi Shichijo, 1991, 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers.

Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel

Ehsan Afshari, Ruonan Han, Yaming Zhang, 2013, IEEE Journal of Solid-State Circuits.

High Frequency TDDB of Reinforced Isolation Dielectric Systems

Hisashi Shichijo, Tom Bonifield, Honglin Guo, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Integration of GaAs 4 kbit memory with 750-gate logic for digital RF memory applications

Hisashi Shichijo, W. A. White, A. H. Taddiken, 1989, 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.

Schottky diodes in CMOS for terahertz circuits and systems

Ruonan Han, Dongha Shim, Yaming Zhang, 2013, 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Selective LPE Growth Kinetics Of GaAs On MBE-Grown GaAs On Si

Hisashi Shichijo, Shiro Sakai, Richard J. Matyi, 1988, Other Conferences.

Compact, High Impedance and Wide Bandwidth Detectors for Characterization of Millimeter Wave Performance

Hisashi Shichijo, K. O. Kenneth, Chieh-Lin Wu, 2012, IEEE Journal of Solid-State Circuits.

A 4Mb DRAM with cross point trench transistor cell

Sanjay K. Banerjee, Bao Tran, James D. Gallia, 1986, 1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

Terahertz image sensors using CMOS Schottky barrier diodes

Ruonan Han, Yaming Zhang, Youngwan Kim, 2012, 2012 International SoC Design Conference (ISOCC).

Design and application of a GaAs digital RF memory chip

D. A. Whitmire, Hisashi Shichijo, W. A. White, 1990 .

Room‐temperature continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1987 .

Full Band Monte Carlo Program for Electrons in Silicon

Hisashi Shichijo, J. Bude, J. Bude, 1991 .

TITE RAM: A NEW SOI DRAM GAIN CELL FOR MBIT DRAM's.

Ashwin H. Shah, Hisashi Shichijo, William F. Richardson, 1984 .

Hot-electron degradation of n-channel polysilicon MOSFETs

Hisashi Shichijo, R. Sundaresan, Sanjay K. Banerjee, 1988 .

Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1988 .

Schottky diodes in CMOS for terahertz circuits and systems

Dongha Shim, Youngwan Kim, Hisashi Shichijo, 2013 .

Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures

Karl Hess, Hisashi Shichijo, G. E. Stillman, 1981 .

Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, D. C. Hall, 1988 .

Band-structure-dependent transport and impact ionization in GaAs

Karl Hess, Hisashi Shichijo, K. Hess, 1981 .

Negative differential resistance through real‐space electron transfer

Karl Hess, Hadis Morkoç, Hisashi Shichijo, 1979 .

Stability of 300 K continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1987 .

High-frequency noise measurements on MOSFETs with channel-lengths in sub-100 nm regime

Hisashi Shichijo, Fan-Chi Hou, R. P. Jindal, 2009, 2009 2nd International Workshop on Electron Devices and Semiconductor Technology.

Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysilicon

Hisashi Shichijo, R. F. Pinizzotto, Satwinder Malhi, 1983 .

A 4-Mbit DRAM with trench-transistor cell

H. E. Davis, Ashwin H. Shah, Hisashi Shichijo, 1986 .

Effect of post‐growth annealing on patterned GaAs on silicon

Hisashi Shichijo, W. M. Duncan, Richard J. Matyi, 1988 .

Confined‐carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p‐n junction

Hisashi Shichijo, Nick Holonyak, E. A. Rezek, 1977 .

A re-examination of practical performance limits of scaled n-channel and ϱ-channel MOS devices for VLSI

Hisashi Shichijo, H. Shichijo, 1983 .