Alexandros Georgakilas

发表

A parallelized GPU-based simulating annealing algorithm for intensity modulated radiation therapy optimization

Panagiota Galanakou, Georgios Kalantzis, Theodora Leventouri, 2017, 2017 18th IEEE/ACIS International Conference on Software Engineering, Artificial Intelligence, Networking and Parallel/Distributed Computing (SNPD).

III-V material and device aspects for the monolithic integration of GaAs devices on Si using GaAs/Si low temperature wafer bonding

Alexandros Georgakilas, D. Cengher, G. Halkias, 2001, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).

Photoluminescence study of hexagonal GaN heteroepitaxial layers grown by molecular beam epitaxy on Al/sub 2/O/sub 3/, Si and GaAs substrates

Alexandros Georgakilas, V. Cimpoca, E.-M. Pavelescu, 2000, 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486).

A parallelized GPU-based simulating annealing algorithm for intensity modulated radiation therapy optimization

Panagiota Galanakou, Georgios Kalantzis, Theodora Leventouri, 2017, 2017 18th IEEE/ACIS International Conference on Software Engineering, Artificial Intelligence, Networking and Parallel/Distributed Computing (SNPD).

A technology for GaAs-based optoelectronic integrated circuits

Alexandros Georgakilas, D. Cengher, M. Cengher, 2000, 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486).

Realistic end-to-end simulation of the optoelectronic links and comparison with the electrical interconnections for system-on-chip applications

E. D. Kyriakis-Bitzaros, Alexandros Georgakilas, Y. Moisiadis, 2001 .

Comparison of the signal latency in optical and electrical interconnections for interchip links

N. Haralabidis, E. D. Kyriakis-Bitzaros, Alexandros Georgakilas, 2001 .

Microstructural differences of the two possible orientations of GaAs on vicinal (001) Si substrates

Alexandros Georgakilas, Katerina Tsagaraki, K. Tsagaraki, 2001 .

Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma‐Assisted MBE

Alexandros Georgakilas, Francesca Peiró, A. Cornet, 2001 .

Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

Alexandros Georgakilas, George Konstantinidis, Katerina Tsagaraki, 2016 .

Achievements and limitations in optimized GaAs films grown on Si by molecular‐beam epitaxy

Alexandros Georgakilas, Aristos Christou, P. Panayotatos, 1992 .

Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy

Alexandros Georgakilas, Katerina Tsagaraki, M. Androulidaki, 2009 .

Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding

Alexandros Georgakilas, D. Cengher, G. Halkias, 2001 .

Silicon substrate optimization for microwave applications of GaAs/Si MESFETs

Alexandros Georgakilas, P. Panayotatos, E. Aperathitis, 1997 .

Evaluation of performance capabilities of emitters and detectors based on a common MQW structure

Alexandros Georgakilas, D. Cengher, E. Aperathitis, 2001 .

Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon

Alexandros Georgakilas, Konstantinos Zekentes, Albert Cornet, 1994 .

Investigation of Si-substrate preparation for GaAs-on-Si MBE growth

Alexandros Georgakilas, G. Constantinidis, P. Panayotatos, 1995 .

Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry

Alexandros Georgakilas, M. Heuken, M. Heuken, 2008 .

Photodetectors fabricated on heteroepitaxial GaAs/Si structures grown by molecular beam epitaxy

Alexandros Georgakilas, Nicolas A. Papanicolaou, J. A. Modolo, 1990 .

Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth

Alexandros Georgakilas, George Konstantinidis, Emmanouil Dimakis, 2005 .

High electron mobility transistors based on the AlN/GaN heterojunction

Alexandros Georgakilas, George Konstantinidis, Katerina Tsagaraki, 2009 .

Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates

Alexandros Georgakilas, Emmanouil Dimakis, Spiros Mikroulis, 2002 .

Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys

Alexandros Georgakilas, Emmanouil Dimakis, Katerina Tsagaraki, 2006 .

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Sergey Bychikhin, Dionyz Pogany, C. Gaquiere, 2011 .

Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices

Alexandros Georgakilas, D. Cengher, Katerina Tsagaraki, 2001 .

Alloy clustering and defect structure in the molecular beam epitaxy of In_0.53Ga_0.47As on silicon

Alexandros Georgakilas, J. Stoemenos, Athanasios Dimoulas, 1992 .

Temperature dependence of GaN Schottky diodes I-V characteristics

Alexandros Georgakilas, Jan Kuzmik, George Konstantinidis, 2005 .

Effects of InGaAs/GaAs strained‐layer superlattices in optimized molecular‐beam‐epitaxy GaAs on Si with Si buffer layers

Alexandros Georgakilas, A. Christou, A. Georgakilas, 1994 .

Microwave performance of GaAs-on-Si MESFETs with Si buffer layers

Christos Papavassiliou, Alexandros Georgakilas, George Konstantinidis, 1993 .

InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

Alexandros Georgakilas, Emmanouil Dimakis, Katerina Tsagaraki, 2006 .

Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure

Viorel Dragoi, E. D. Kyriakis-Bitzaros, Alexandros Georgakilas, 2002 .