In-Seok Yeo

ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation

Tae-Kyun Kim, Se-Aug Jang, Jun-Mo Yang, 2000 .

Characteristics of Al/sub 2/O/sub 3/ gate dielectric prepared by atomic layer deposition for giga scale CMOS DRAM devices

In-Seok Yeo, Jae-Sung Roh, Jeong-Mo Hwang, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications

U-In Chung, In-Seok Yeo, In-Gyu Baek, 2006, 2009 Symposium on VLSI Technology.

Integration and Electrical Properties of Carbon Nanotube Array for Interconnect Applications

Joo-Tae Moon, In-Seok Yeo, Hong Sik Yoon, 2006, 2006 Sixth IEEE Conference on Nanotechnology.

Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability

In-Seok Yeo, Seong Chu Lim, Dong Jae Bae, 2009 .

Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

In-Seok Yeo, Heung-Jae Cho, Dae-Gyu Park, 2001 .

1D thickness scaling study of phase change material (Ge2Sb2Te5) using a pseudo 3-terminal device

H.-S. Philip Wong, Joo-Tae Moon, Yuan Zhang, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Thermally Robust Multi-layer Non-Volatile Polymer Resistive Memory

Joo-Tae Moon, U-In Chung, Byung-Il Ryu, 2006, 2006 International Electron Devices Meeting.

A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

Byung Jin Cho, In-Seok Yeo, C. H. Ling, 2000 .

Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure

Byung Jin Cho, Se-Aug Jang, In-Seok Yeo, 2000 .

Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor

U-In Chung, Byung-Il Ryu, In-Seok Yeo, 2006, 2006 International Electron Devices Meeting.