Marco Bertin

Studio di affidabilità di GaN HEMT con lunghezze di gate submicrometriche (fino a 0,25um)

Marco Bertin, 2011 .

Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

Dionyz Pogany, Gaudenzio Meneghesso, Enrico Zanoni, 2013 .

Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2011, 2011 International Electron Devices Meeting.

Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2012 .

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2012 .

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013 .