S. Takagi

发表

Obstacle avoidance control for a human-operated mobile robot

N. Uchiyama, S. Sano, T. Hashimoto, 2008, 2008 10th IEEE International Workshop on Advanced Motion Control.

Revision support system for japanese text

S. Takagi, T. Yasuda, K. Shimazaki, 1989 .

Phase-error reduction technique for quadrature ring oscillators

S. Takagi, K. Yoshizaki, N. Fujii, 2005, Proceedings of the 2005 European Conference on Circuit Theory and Design, 2005..

Design optimization of staggered amplifier for wide-band applications

S. Takagi, N. Retdian, N. Fujii, 2007, 2007 18th European Conference on Circuit Theory and Design.

Novel DC offset cancellation in direct conversion receivers

S. Takagi, N. Fuji, A. Niwa, 2008, 2008 3rd International Symposium on Communications, Control and Signal Processing.

Robust control of rotary cranes based on pole placement approach

N. Uchiyama, S. Sano, S. Takagi, 2006, 9th IEEE International Workshop on Advanced Motion Control, 2006..

Point-contact type foot with springs and posture control for biped walking on rough terrain

N. Uchiyama, S. Sano, S. Takagi, 2008, 2008 10th IEEE International Workshop on Advanced Motion Control.

CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding

S. Takagi, M. Takenaka, M. Yokoyama, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

High performance extremely-thin body InAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology

S. Takagi, M. Takenaka, M. Yokoyama, 2013, 2013 Symposium on VLSI Technology.

First demonstration of Ge waveguide platform on Ge-on-insulator for mid-infrared integrated photonics

S. Takagi, M. Takenaka, M. Takenaka, 2015, 2015 European Conference on Optical Communication (ECOC).

Design and properties of planar-type tunnel FETs using In0.53Ga0.47As/InxGa1-xAs/In0.53Ga0.47As quantum well

Mitsuru Takenaka, S. Takagi, M. Takenaka, 2017 .

High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology

A. Toriumi, T. Tezuka, J. Koga, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 International Electron Devices Meeting.

Accurate characterization of electron and hole inversion-layer capacitance and its impact on low voltage operation of scaled MOSFETs

A. Toriumi, S. Takagi, S. Takagi, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

S. Takagi, T. Numata, T. Irisawa, 2005, IEEE Transactions on Electron Devices.

High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique

T. Tezuka, S. Takagi, S. Nakaharai, 2005, IEEE Electron Device Letters.

Physical mechanism for high hole mobility in [110]-surface strained- and unstrained-MOSFETs

T. Tezuka, S. Takagi, S. Nakaharai, 2003, IEEE International Electron Devices Meeting 2003.

Physical Understanding of Strain Effects on Gate Oxide Reliability of MOSFETs

T. Tezuka, S. Takagi, N. Hirashita, 2007, 2007 IEEE Symposium on VLSI Technology.

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

S. Sugahara, T. Tezuka, N. Sugiyama, 2008, IEEE Transactions on Electron Devices.

Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates

S. Takagi, M. Takenaka, M. Yokoyama, 2013, 2013 Symposium on VLSI Technology.

Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1−xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering

S. Takagi, M. Takenaka, M. Yokoyama, 2012, 2012 Symposium on VLSI Technology (VLSIT).

High mobility CMOS technologies using III-V/Ge channels on Si platform

S. Takagi, M. Takenaka, M. Takenaka, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

S. Takagi, M. Takenaka, R. Zhang, 2015 .

Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs

S. Takagi, M. Takenaka, Yi Zhao, 2008, 2008 IEEE International Electron Devices Meeting.

Experimental examination of physical model for direct tunneling current in unstressed/stressed ultrathin gate oxides

A. Toriumi, S. Takagi, M. Takayanagi, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation

S. Takagi, M. Takenaka, T. Hoshii, 2011, 2011 International Electron Devices Meeting.

Strain Engineering of Plasma Dispersion Effect for SiGe Optical Modulators

S. Takagi, M. Takenaka, M. Takenaka, 2012, IEEE Journal of Quantum Electronics.

Experimental Examination and Physical Understanding of the Coulomb Scattering Mobility in Strained-Si nMOSFETs

O. Weber, S. Takagi, O. Weber, 2008, IEEE Transactions on Electron Devices.

Control of threshold-voltage and short-channel effects in ultrathin strained-SOI CMOS devices

T. Tezuka, J. Koga, S. Takagi, 2005, IEEE Transactions on Electron Devices.

III–V and Ge/strained SOI tunneling FET technologies for low power LSIs

S. Takagi, M. Takenaka, K. Nishi, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Performance improvement of InxGa1−xAs Tunnel FETs with Quantum Well and EOT scaling

S. Takagi, M. Takenaka, M. Takenaka, 2016, 2016 IEEE Symposium on VLSI Technology.

High mobility III–V-on-insulator MOSFETs on Si with ALD-Al2O3 BOX layers

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 Symposium on VLSI Technology.

High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

T. Tezuka, S. Takagi, S. Nakaharai, 2005, IEEE Electron Device Letters.

High performance multi-gate pMOSFET using uniaxially-strained SGOI channels

T. Tezuka, S. Takagi, N. Hirashita, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Re-examination of subband structure engineering in ultra-short channel MOSFETs under ballistic carrier transport

S. Takagi, S. Takagi, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Advanced SOI-MOSFETs with strained-Si channel for high speed CMOS-electron/hole mobility enhancement

S. Takagi, H. Satake, N. Sugiyama, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

J. Koga, S. Takagi, K. Uchida, 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..

High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Rui Zhang, S. Takagi, M. Takenaka, 2013, IEEE Transactions on Electron Devices.

CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si

S. Takagi, S.-H Kim, M. Takenaka, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Experimental evidence of inelastic tunneling and new I-V model for stress-induced leakage current

A. Toriumi, S. Takagi, N. Yasuda, 1996, International Electron Devices Meeting. Technical Digest.

Carrier-transport-enhanced CMOS using new channel materials and structures

T. Tezuka, S. Takagi, N. Hirashita, 2007, 2007 International Semiconductor Device Research Symposium.

Quantitative evaluation of energy distribution of interface trap density at MoS2 MOS interfaces by the Terman method

S. Takagi, M. Takenaka, M. Takenaka, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

p-n Junction Leakage Current in Strained-Si/SGOI Diodes

T. Tezuka, S. Takagi, N. Hirashita, 2006, 2006 International SiGe Technology and Device Meeting.

High performance CMOS operation of strained-SOI MOSFETs using thin film SiGe-on-insulator substrate

T. Tezuka, S. Takagi, T. Numata, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability

S. Takagi, M. Takenaka, M. Yokoyama, 2013, 2013 IEEE International Electron Devices Meeting.

High performance 4.5-nm-thick compressively-strained Ge-on-insulator pMOSFETs fabricated by Ge condensation with optimized temperature control

S. Takagi, M. Takenaka, M. Takenaka, 2017, 2017 Symposium on VLSI Technology.

Record-low Injection-current Strained SiGe variable optical attenuator with optimized lateral PIN junction

S. Takagi, M. Takenaka, J. Fujikata, 2014, 2014 The European Conference on Optical Communication (ECOC).

High performance InGaAs-on-insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si

S. Takagi, M. Takenaka, M. Yokoyama, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Impact of La2O3/InGaAs MOS interface on InGaAs MOSFET performance and its application to InGaAs negative capacitance FET

S. Takagi, M. Takenaka, C. Yokoyama, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Subband structure engineering for performance enhancement of Si MOSFETs

A. Toriumi, J. Koga, S. Takagi, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Self-aligned metal source/drain InxGa1−xAs n-MOSFETs using Ni-InGaAs alloy

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 International Electron Devices Meeting.

Design for scaled thin film strained-SOI CMOS devices with higher carrier mobility

T. Tezuka, S. Takagi, T. Numata, 2002, Digest. International Electron Devices Meeting,.

Low-driving-current InGaAsP photonic-wire optical switches using III–V CMOS photonics platform

S. Takagi, M. Takenaka, M. Yokoyama, 2012, 2012 38th European Conference and Exhibition on Optical Communications.

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Rui Zhang, S. Takagi, M. Takenaka, 2012, 2012 International Electron Devices Meeting.

Tunneling MOSFET technologies using III-V/Ge materials

S. Takagi, M. Takenaka, K. Nishi, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Strained-Si- and SiGe-on-insulator (strained-SOI and SGOI) MOSFETs for high performance/low power CMOS application

S. Takagi, S. Takagi, 2002, 60th DRC. Conference Digest Device Research Conference.

Device design for subthreshold slope and threshold voltage control in sub-100-nm fully depleted SOI MOSFETs

S. Takagi, T. Numata, 2004, IEEE Transactions on Electron Devices.

[110] strained-SOI n-MOSFETs with higher electron mobility

T. Tezuka, S. Takagi, N. Sugiyama, 2003, IEEE Electron Device Letters.

Electron Transport Properties of Ultrathin-body and Tri-gate SOI nMOSFETs with Biaxial and Uniaxial Strain

T. Tezuka, S. Takagi, T. Numata, 2006, 2006 International Electron Devices Meeting.

High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si

S. Takagi, H. Sugiyama, M. Takenaka, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Analysis of an ONO gate film effect on n- and p-MOSFET mobilities

H. Iwai, S. Takagi, S. Onga, 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.

Hole-Mobility Enhancement in Ge-Rich Strained SiGe-on-Insulator pMOSFETs at High Temperatures

T. Tezuka, S. Takagi, N. Hirashita, 2007, IEEE Transactions on Electron Devices.

(110)-surface strained-SOI CMOS devices with higher carrier mobility

T. Tezuka, S. Takagi, S. Nakaharai, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Physical origins of mobility enhancement of Ge pMISFETs with Si passivation layers

S. Takagi, H. Ota, S. Migita, 2006, 2009 Symposium on VLSI Technology.

Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

T. Tezuka, J. Koga, S. Takagi, 2003, IEEE International Electron Devices Meeting 2003.

High Performance 60 nm Gate Length Germanium p-MOSFETs with Ni Germanide Metal Source/Drain

K. Suzuki, S. Takagi, K. Ikeda, 2007, 2007 IEEE International Electron Devices Meeting.