Seigo Ando

Growth shape control of group-III nitrides by selective-area MOVPE

Naoki Kobayashi, Masami Kumagai, Tetsuya Akasaka, 1998, Other Conferences.

Reliable non-Zn-diffused Inp/InGaAs avalanche photodiode with buried n-InP layer operated by electron injection mode

Hiroshi Ito, Takahiro Ito, Yoshifumi Muramoto, 2004 .

Short Cavity Semiconductor Laser

Seigo Ando, Nobuo Matsumoto, 1977 .

Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback Method

Kunishige Oe, Hiroyuki Kano, Koichi Sugiyama, 1978 .

Hexagonal-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition

Naoki Kobayashi, Seigo Ando, Hiroaki Ando, 1995 .

Triangular-Facet Lasers Coupled by a Rectangular Optical Waveguide

Naoki Kobayashi, Seigo Ando, Hiroaki Ando, 1997 .

GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition

Takashi Fukui, Yasuhiro Tokura, Seigo Ando, 1991 .

Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition

Takashi Fukui, Yoshino K. Fukai, Seigo Ando, 1990 .