Giorgio Baccarani

发表

Sensors small and numerous: always a winning strategy?

Eugenio Martinelli, Arnaldo D'Amico, Corrado Di Natale, 2005 .

Three-dimensional simulation of a floating-gate EPROM cell

P. Ciampolini, Massimo Rudan, Giorgio Baccarani, 1989, Proceedings. VLSI and Computer Peripherals. COMPEURO 89.

Adaptive mesh generation preserving the quality of the initial grid

Paolo Ciampolini, Antonio Gnudi, Giorgio Baccarani, 1989, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

A design flow for analog fuzzy processors and its application to the development of a DC/DC power conversion stage

Alberto Bellini, Nicolò Manaresi, Riccardo Rovatti, 1998, 1998 IEEE International Conference on Fuzzy Systems Proceedings. IEEE World Congress on Computational Intelligence (Cat. No.98CH36228).

Memory Devices: Part II – Non-Volatile Memories

Giorgio Baccarani, Elena Gnani, 2005 .

Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2013, Microelectron. J..

Integrated lock–in amplifier for sensor applications

Antonio Gnudi, L. Colalongo, Giorgio Baccarani, 1999 .

Performance limits of CMOS technology and perspectives of quantum devices

Giorgio Baccarani, Susanna Reggiani, 2000 .

An ASIC chip set for parallel fuzzy database mining

Roberto Guerrieri, Giorgio Baccarani, Alberto Ferrari, 1996, IEEE Micro.

Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement

Antonio Gnudi, Marie Denison, Giorgio Baccarani, 2009, ESSDERC 2009.

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2015 .

Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD=0.4V

Antonio Gnudi, Giorgio Baccarani, Elena Gnani, 2014 .

Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited)

Antonio Gnudi, Marie Denison, Giorgio Baccarani, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Gate stack optimization to minimize power consumption in super-lattice fets

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

A 2D-DCT low-power architecture for H.261 coders

Roberto Guerrieri, Giorgio Baccarani, E. Scopa, 1995, 1995 International Conference on Acoustics, Speech, and Signal Processing.

Theoretical analysis and modeling for nanoelectronics

Antonio Gnudi, Giorgio Baccarani, Elena Gnani, 2016 .

Random Access Analog Memory for Early Vision

Roberto Guerrieri, Marco Tartagni, Eleonora Franchi, 1991, ESSCIRC '91: Proceedings - Seventeenth European Solid-State Circuits Conference.

A low-cost optical sensor for precise position and motion estimation of fast-moving objects

Roberto Guerrieri, Marco Tartagni, Eleonora Franchi, 1994, Proceedings of IECON'94 - 20th Annual Conference of IEEE Industrial Electronics.

CMOS analog multipliers based on a class-B squaring circuit

Antonio Gnudi, Giorgio Baccarani, A. Pellegrini, 1998, ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187).

Three-dimensional simulation of VLSI structures

Paolo Ciampolini, Giorgio Baccarani, Massimo Rudan, 1990, Eur. Trans. Telecommun..

Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture

Antonio Gnudi, D. Fabiani, S. Krishnan, 2018, Microelectron. Reliab..

A Single-Scan Algorithm for Connected Components Labelling in a Traffic Monitoring Application

Riccardo Rovatti, Alessandro Bevilacqua, Alessandro Lanza, 2003, SCIA.

Rinaldo Castello and the Analog-Design Environment in Pavia: A Success Story

Giorgio Baccarani, 2014, IEEE Solid-State Circuits Magazine.

Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2014, IEEE Transactions on Electron Devices.

Automatic synthesis of analog fuzzy controllers: a hardware and software approach

Roberto Guerrieri, Nicolò Manaresi, Riccardo Rovatti, 1996, IEEE Trans. Ind. Electron..

An array-processor based architecture for classification problems

Roberto Guerrieri, Giorgio Baccarani, Alberto Ferrari, 1993, Proceedings of International Conference on Application Specific Array Processors (ASAP '93).

A novel metric for nearest-neighbor classification of hand-written digits

Roberto Guerrieri, Giorgio Baccarani, Zsolt Miklós Kovács-Vajna, 1992, Proceedings., 11th IAPR International Conference on Pattern Recognition. Vol.II. Conference B: Pattern Recognition Methodology and Systems.

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime

Antonio Gnudi, Marie Denison, Giorgio Baccarani, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform

Antonio Gnudi, Giorgio Baccarani, Emanuele Baravelli, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty

Antonio Gnudi, Giorgio Baccarani, Giovanni Beneventi, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2015, IEEE Transactions on Electron Devices.

Simulation of three-dimensional effects in VLSI devices

P. Ciampolini, Giorgio Baccarani, A. Pierantoni, 1990 .

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

Antonio Gnudi, Giorgio Baccarani, Emanuele Baravelli, 2014, IEEE Transactions on Electron Devices.

Accurate Modeling ofElectro-Thermal Effects inSilicon Devices

P. Ciampolini, Giorgio Baccarani, A. Pierantoni, 1992 .

DC and small-signal numerical simulation of graphene base transistor for terahertz operation

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs

Antonio Gnudi, Giorgio Baccarani, F. Villani, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

SIMULATION OF A FLOATING-GATE EPROM CELL

P. Ciampolini, Massimo Rudan, Giorgio Baccarani, 1989 .

Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model

Antonio Gnudi, Giorgio Baccarani, Elena Gnani, 2013 .

A built-in rule scan structure for analog fuzzy processors test and fault diagnosis

Alberto Bellini, Riccardo Rovatti, Giorgio Baccarani, 1997, Proceedings of 6th International Fuzzy Systems Conference.

Three-Dimensional Implementation of a Unified Transport Model

P. Ciampolini, Giorgio Baccarani, A. Pierantoni, 1995 .

TCAD study of DLC coatings for large-area high-power diodes

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2018, Microelectron. Reliab..

Recent Advances in Device Simulation Using Standard Transport Models

Giorgio Baccarani, Massimo Rudan, C. Sala, 1998, VLSI Design.

Numerical modeling of advanced semiconductor devices

Antonio Gnudi, Wai Lee, Giorgio Baccarani, 1992, IBM J. Res. Dev..

Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight

Antonio Gnudi, Marie Denison, Giorgio Baccarani, 2010 .

Theoretical analyses and modeling for nanoelectronics

Antonio Gnudi, Giorgio Baccarani, Emanuele Baravelli, 2015, ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC).

A silicon compiler of analog fuzzy controllers: from behavioral specifications to layout

Roberto Guerrieri, Riccardo Rovatti, Eleonora Franchi, 1996, IEEE Trans. Fuzzy Syst..

Sensitivity Analysis for Device Design

Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, 1987, ESSDERC '87: 17th European Solid State Device Research Conference.

A photodiode cell for applications to position and motion estimation sensors

Roberto Guerrieri, Eleonora Franchi, Giorgio Baccarani, 1996, IEEE Trans. Ind. Electron..

Integrated SC lowpass filter with a 1-100 Hz variable bandwidth

Antonio Gnudi, Giorgio Baccarani, C. Finotti, 1997 .

A micropower current-mode CMOS function approximation circuit

Nicolò Manaresi, Riccardo Rovatti, Giorgio Baccarani, 1999, 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453).

An enhanced two-level Boolean synthesis methodology for fuzzy rules minimization

Roberto Guerrieri, Riccardo Rovatti, Giorgio Baccarani, 1995, IEEE Trans. Fuzzy Syst..

Efficient 3-D simulation of complex structures

Paolo Ciampolini, Giorgio Baccarani, Anna Pierantoni, 1990, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

A new discretization strategy of the semiconductor equations comprising momentum and energy balance

Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

Theoretical analyses and modeling for nanoelectronics

Antonio Gnudi, Giorgio Baccarani, Emanuele Baravelli, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Hardware and software integrated toolkit for low cost analog fuzzy controllers

Roberto Guerrieri, Nicolò Manaresi, Riccardo Rovatti, 1994, Proceedings of IECON'94 - 20th Annual Conference of IEEE Industrial Electronics.

Realistic device simulation in three dimensions (EPROM cell)

P. Ciampolini, C. Cecchetti, Giorgio Baccarani, 1989, International Technical Digest on Electron Devices Meeting.

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Luca Selmi, Claire Fenouillet-Beranger, Asen Asenov, 2009 .

Adaptive mesh generation in three dimensional device simulation

P. Ciampolini, Haruhiko Kato, Giorgio Baccarani, 1994, Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.

Drain-conductance optimization in nanowire TFETs

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

A dual gate flash EEPROM cell with two-bit storage capacity

Massimo Rudan, Giorgio Baccarani, M. Lorenzini, 1997 .

Hydrodynamic simulation of semiconductor devices operating at low temperature

Antonio Gnudi, Giorgio Baccarani, Alberto Leone, 1994, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation

Antonio Gnudi, Giorgio Baccarani, Davide Ventura, 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

Characterization and modeling of electrical stress degradation in STI-based integrated power devices

Antonio Gnudi, Marie Denison, Giorgio Baccarani, 2014 .

An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices

Giorgio Baccarani, Luigi Colalongo, Marina Valdinoci, 2000, VLSI Design.

Analog synthesis of nonlinear functions based on fuzzy logic

Alberto Bellini, Nicolò Manaresi, Riccardo Rovatti, 1998, IEEE J. Solid State Circuits.

Highly constrained neural networks for industrial quality control

Roberto Guerrieri, Nicola Guglielmi, Giorgio Baccarani, 1996, IEEE Trans. Neural Networks.

Three-Dimensional Simulation of VLSI Devices

P. Ciampolini, Giorgio Baccarani, M. Rudan, 1989 .

Surface mobility in silicon at large operating temperature

W. Fichtner, L. Colalongo, Giorgio Baccarani, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

Fuzzy rules optimization and logic synthesis

R. Guerrieri, Riccardo Rovatti, Giorgio Baccarani, 1993, [Proceedings 1993] Second IEEE International Conference on Fuzzy Systems.

Floating body effects in polysilicon thin-film transistors

L. Colalongo, Giorgio Baccarani, Alessandro Pecora, 1997 .

Process and device modeling for microelectronics

Giorgio Baccarani, G. Baccarani, 1993 .

Can Interface Traps Suppress TFET Ambipolarity?

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2013, IEEE Electron Device Letters.

On the Structure and Closure-Condition of the Hydrodynamic Model

Massimo Rudan, Giorgio Baccarani, 1995 .

Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs

Massimo Rudan, Giorgio Baccarani, Susanna Reggiani, 2005 .

Semiclassical transport in silicon nanowire FETs including surface roughness

Antonio Gnudi, Massimo Rudan, Giorgio Baccarani, 2008 .

Modeling of gate-all-around charge trapping SONOS memory cells

Guo-Qiang Lo, Antonio Gnudi, Dim-Lee Kwong, 2010 .

Physical models for numerical device simulation

P. Ciampolini, Roberto Guerrieri, Giorgio Baccarani, 1986 .

Transport properties of polycrystalline silicon films

Giorgio Baccarani, Bruno Ricco, G. Spadini, 1978 .

Analytical i.g.f.e.t. model including drift and diffusion currents

Giorgio Baccarani, M. Rudan, G. Spadini, 1978 .

Current transport in narrow-base transistors

A. M. Mazzone, Giorgio Baccarani, G. Baccarani, 1977 .

Steep-slope nanowire FET with a superlattice in the source extension

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2010 .

Transconductance degradation in thin-Oxide MOSFET's

Giorgio Baccarani, M. R. Wordeman, 1982 .

Role of the Insulating Fillers in the Encapsulation Material on the Lateral Charge Spreading in HV-ICs

Dhanoop Varghese, Srikanth Krishnan, Antonio Gnudi, 2017, IEEE Transactions on Electron Devices.

Two-dimensional NOSFET Simulation by means of Multidimensional Spherical Harmonics Expansion of the Boltzmann Transport Equation

Antonio Gnudi, Giorgio Baccarani, D. Ventura, 1992 .

TFET inverter static and transient performances in presence of traps and localized strain

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2019, Solid-State Electronics.

Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs

Massimo Rudan, Giorgio Baccarani, Susanna Reggiani, 2005 .

Current transport in Schottky‐barrier diodes

Giorgio Baccarani, 1976 .

Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation

Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, 2013, IEEE Transactions on Electron Devices.

Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

Wolfgang Fichtner, L. Colalongo, Massimo Rudan, 2002 .

Optimization of n- and p-type TFETs Integrated on the Same ${\rm InAs}/{\rm Al}_{x}{\rm Ga}_{1-x}{\rm Sb}$ Technology Platform

Antonio Gnudi, Giorgio Baccarani, Emanuele Baravelli, 2014, IEEE Transactions on Electron Devices.

I-V characteristics of polycrystalline silicon resistors

Giorgio Baccarani, Bruno Ricco, M. Impronta, 1978 .

A current-mode piecewise-linear function approximation circuit based on fuzzy-logic

Nicolò Manaresi, Riccardo Rovatti, Eleonora Franchi, 1998, ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187).

Numerical analysis of poly-TFTs under off conditions

L. Colalongo, Giorgio Baccarani, Carlo Reita, 1997 .

Investigation on anomalous leakage currents in poly-TFTs including dynamic effects

L. Colalongo, Giorgio Baccarani, M. Valdinoci, 1997 .

Monte Carlo simulation of current transport in forward-biased Schottky-barrier diodes

A. M. Mazzone, Giorgio Baccarani, 1976 .

Impact-ionization in silicon at large operating temperature

Massimo Rudan, Giorgio Baccarani, L. Zullino, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

Analysis of HCS in STI-based LDMOS transistors

Antonio Gnudi, Marie Denison, Giorgio Baccarani, 2010, 2010 IEEE International Reliability Physics Symposium.

Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures

Gaudenzio Meneghesso, Antonio Gnudi, Peter Moens, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors

Antonio Gnudi, Giorgio Baccarani, D. Ventura, 1992 .

MOSFET threshold extraction circuit

Nicolò Manaresi, Eleonora Franchi, Antonio Gnudi, 1995 .

Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions

L. Colalongo, Giorgio Baccarani, Carlo Reita, 1997 .

Three-dimensional simulation of semiconductor devices: state of the art and prospects☆

P. Ciampolini, Giorgio Baccarani, A. Pierantoni, 1993 .

Fuzzy reversible logic

Riccardo Rovatti, Giorgio Baccarani, G. Baccarani, 1998, 1998 IEEE International Conference on Fuzzy Systems Proceedings. IEEE World Congress on Computational Intelligence (Cat. No.98CH36228).