S. Ryu

4H-SiC high power SIJFET module

Toshihiko Hayashi, Yoshitaka Sugawara, D. Takayama, 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

Power MOSFETs in 4H-SiC: Device Design and Technology

S. Ryu, A. Agarwal, S. Ryu, 2004 .

Ultra high voltage IGBTs in 4H-SiC

S. Bhattacharya, A. Kadavelugu, D. Grider, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Performance of a 1-kV, Silicon Carbide Avalanche Breakdown Diode

C. W. Tipton, S. Ryu, D. C. Capell, 2015, IEEE Transactions on Power Electronics.

1500 V, 4 amp 4H-SiC JBS diodes

Jih-Sheng Lai, Allen R. Hefner, John W. Palmour, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).