C. T. Elliott

发表

Infra-Red Detection Using Minority Carrier Exclusion

A. M. White, T. Ashley, C. T. Elliott, 1986, Other Conferences.

Photoconductive Detectors Employing An Optically Induced Non-Linearity

A. M. White, C. T. Elliott, A. B. Dean, 1985, Optics & Photonics.

Design of a Kalman Derived, Fixed Gain, Hybrid Navigation System.

C. T. Elliott, W. R. Light, R. F. Clark, 1972 .

Advanced heterostructures for In1-xAlxSb and Hg1-xCdxTe detectors and emitters

C. T. Elliott, 1996, Defense, Security, and Sensing.

Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodes

Neil T. Gordon, T. Ashley, R. S. Hall, 1995 .

A heterojunction minority carrier barrier for InSb devices

T. Ashley, C. T. Elliott, A. B. Dean, 1993 .

Applications of negative luminescence

Neil Gordon, T. Ashley, T. J. Phillips, 1997 .

Novel HgxCd1−xTe device structure for higher operating temperature detectors

L. G. Hipwood, Neil T. Gordon, C. D. Maxey, 2003 .

Photoconductive and Non-Equilibrium Devices in HgCdTe and Related Alloys

C. T. Elliott, 2001 .

Auger recombination dynamics of InxGa1-xSb

Carl R. Pidgeon, Ben Murdin, T. Ashley, 1999 .

Reverse breakdown in long wavelength lateral collection CdxHg1−xTe diodes

Neil T. Gordon, C. T. Elliott, G. Crimes, 1990 .

Uncooled InSb/In1−xAlxSb mid‐infrared emitter

Neil T. Gordon, T. Ashley, R. S. Hall, 1994 .

Ambient temperature diodes and field‐effect transistors in InSb/In1−xAlxSb

Christopher McConville, Tim Ashley, C. R. Whitehouse, 1991 .

Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices

Neil T. Gordon, T. J. Phillips, C. D. Maxey, 1996 .

High performance, large area, uncooled detectors for mid-infrared wavelengths

H. R. Hardaway, J. G. Crowder, C. T. Elliott, 2001 .

Mid-infrared In1−xAlxSb/InSb heterostructure diode lasers

M. Carroll, T. Ashley, C. T. Elliott, 1997 .

Auger recombination dynamics of Hg0.795Cd0.205Te in the high excitation regime

C. T. Elliott, A. Beattie, S. Sivananthan, 1997 .

Room temperature narrow gap semiconductor diodes as sources and detectors in the 5–10 μm wavelength region

C. T. Elliott, T. Ashley, A. Johnson, 1996 .

Room‐temperature electroluminescence at wavelengths of 5–7 μm from HgCdTe heterostructure diodes

C. T. Elliott, T. Ashley, B. Matthews, 1994 .

Uncooled high‐speed InSb field‐effect transistors

C. T. Elliott, A. B. Dean, T. Ashley, 1995 .

Metal organic vapor phase epitaxy (MOVPE) grown heterojunction diodes in Hg1-xCdxTe

Neil T. Gordon, C. D. Maxey, C. T. Elliott, 1994, Optics & Photonics.

Minimally cooled heterojunction laser heterodyne detectors in metalorganic vapor phase epitaxially grown Hg1-xCdxTe

C. L. Jones, C. T. Elliott, D. Wilson, 1996 .

Current gain in photodiode structures

C. T. Elliott, A. M. White, A. P. Davis, 1991 .

Effect of intervalence band absorption on the refractive index of p-doped InSb

C. T. Elliott, T. Ashley, M. Carroll, 2000 .

Growth of fully doped Hg1−xCdxTe heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures

C. L. Jones, C. T. Elliott, M. Houlton, 1996 .

Multilayer InSb diodes grown by molecular beam epitaxy for near-ambient temperature operation

C. T. Elliott, A. B. Dean, H. Tarry, 1991 .

A method for routine characterisation of the hole concentration in p-type cadmium mercury telluride

C. T. Elliott, P. Dennis, C. Jones, 1982 .

Cadmium mercury telluride infrared detectors

C. T. Elliott, 1985 .

Influence of Auger and LO-phonon scattering on bulk and 'quasi'-quantum wire mid-IR laser diodes

C. T. Elliott, E. O’Reilly, T. Ashley, 1998 .

Non-equilibrium modes of operation of narrow-gap semiconductor devices

C. T. Elliott, C T Elliott, 1990 .

Investigations into the source of 1/f noise in HgxCd1−xTe diodes

C. T. Elliott, C. Maxey, N. Gordon, 2004 .

1/f noise studies in uncooled narrow gap Hg1−xCdxTe non-equilibrium diodes

C. T. Elliott, T. Phillips, R. Hall, 1997 .

A high-performance CO2 laser heterodyne detector operating at 250 K

C. T. Elliott, D. Wilson, C. Maxey, 1998 .

Non-Equilibrium InSb/InAISb Diodes Grown by MBE

C. T. Elliott, T. Ashley, R. Jefferies, 1997 .

Non-equilibrium devices in HgCdTe

C. T. Elliott, C. Jones, 1997 .

Negative luminescence and its applications

C. T. Elliott, 2001, Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences.

Direct determination of Shockley-Read-Hall trap density in InSb/InAlSb detectors

J. G. Crowder, C. T. Elliott, T. Ashley, 2000 .

Mid-infrared InSb and InAlSb diode lasers

T. Ashley, Charles Thomas Elliott, C. T. Elliott, 1998 .

Towards background-limited, room-temperature, infrared photon detectors in the 3–13 μm wavelength range

Neil T. Gordon, Charles Thomas Elliott, C. T. Elliott, 1999 .

Mid-infrared gas detection using optically immersed, room-temperature, semiconductor devices

H. R. Hardaway, J. G. Crowder, C. T. Elliott, 2002 .

Auger recombination dynamics in highly excited HgCdTe

C. T. Elliott, A. Beattie, C. Ciesla, 1997 .