Yashwanth Balaji

Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures

Iuliana Radu, Guido Groeseneken, Cedric Huyghebaert, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

Giovanni De Micheli, Francky Catthoor, Dennis Lin, 2018, 2018 76th Device Research Conference (DRC).

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

Giovanni De Micheli, Pierre-Emmanuel Gaillardon, Stefan De Gendt, 2019, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

Towards high-performance polarity-controllable FETs with 2D materials

Giovanni De Micheli, Francky Catthoor, Pierre-Emmanuel Gaillardon, 2018, 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE).

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors.

Francky Catthoor, Giovanni De Micheli, Pierre-Emmanuel Gaillardon, 2018, ACS nano.

Demonstration of 2e12cm2eV1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT

Iuliana Radu, J. Van Houdt, D. Lin, 2017 .