Thomas Roedle

With electroluminescence microcopy towards more reliable AlGaN/GaN transistors

Stefan Müller, Michael Mikulla, Joachim Wagner, 2015, SPIE NanoScience + Engineering.

Simple Small-Signal HEMT Model Suitable for GaN Stability Analysis and Technologies Benchmarking

Ammar Issaoun, Thomas Roedle, 2021 .

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Mattias Thorsell, Niklas Rorsman, Herve Blanck, 2016, IEEE Transactions on Electron Devices.