Jie Bai

发表

Research on the Operation State of Large Nuclear Power Unit under the Fault of 500kV Power System

Lei Zhao, Zheng Kou, Jianli Zhao, 2020, 2020 IEEE International Conference on High Voltage Engineering and Application (ICHVE).

Thickness Determination of a Three-layer Wall with Phase Change Materials in a Chinese Solar Greenhouse

Guan Yong, Wenju Hu, Chao Chen, 2017 .

Aspect ratio trapping heteroepitaxy for integration of germanium and compound semiconductors on silicon

Jizhong Li, A. Lochtefeld, Jie Bai, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes

Tao Wang, Shiro Sakai, Jia-Chong Ho, 2001 .

1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate

Tao Wang, Jin-Ping Ao, Shiro Sakai, 2002 .

A study of dislocations in AlN and GaN films grown on sapphire substrates

A. G. Cullis, Peter J. Parbrook, Jie Bai, 2005 .

High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer

Tao Wang, Jin-Ping Ao, Yoshiki Naoi, 2002 .

Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using a porous AlN buffer

A. G. Cullis, Peter J. Parbrook, Jie Bai, 2006 .

Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures

Tao Wang, Shiro Sakai, Jie Bai, 2000 .

Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer

A. G. Cullis, Peter J. Parbrook, Jie Bai, 2007 .

Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

Tao Wang, Jin-Ping Ao, Shiro Sakai, 2002 .

Characterization of InGaN-based nanorod light emitting diodes with different indium compositions

Tao Wang, Jie Bai, Tao Wang, 2012 .

The origin of the high ideality factor in AlGaN‐based quantum well ultraviolet light emitting diodes

Tao Wang, Peter J. Parbrook, Jie Bai, 2010 .