Manfredo Manfredi

发表

Reliability analysis of GaN-Based LEDs for solid state illumination

Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, 2003 .

A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2010, 2010 IEEE International Reliability Physics Symposium.

Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2009 .

Electron and hole-related luminescence processes in gate injection transistors

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2010 .

Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, 2006 .

Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing

Gaudenzio Meneghesso, Enrico Zanoni, M. Pavesi, 1997 .

Hot electron and DX center insensitivity of Al/sub 0.25/Ga/sub 0.75/As/GaAs HFET's designed for microwave power applications

Roberto Menozzi, Claudio Lanzieri, C. Canali, 1998 .

Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa)

Alessandro Paccagnella, Enrico Zanoni, C. Tedesco, 1991 .

Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes

Enrico Zanoni, Uwe Strauss, Fausto Rossi, 2006 .

Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

Gaudenzio Meneghesso, Enrico Zanoni, Francesca Rossi, 2004 .

Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's

Andrea Neviani, Paolo Lugli, Enrico Zanoni, 1996 .