J. Oila

Fall meeting of the Materials Research Society, Boston, USA 1.-5.12.1997

M. Pessa, Keijo Rakennus, P. Uusimaa, 1997 .

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

D. J. Somerford, E. Muñoz, T. Laine, 1998 .

Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

Olivier Briot, J. Oila, Pekka J. Hautojärvi, 1998 .

Ga Vacancies as Dominant Intrinsic Acceptors in GaN Grown by Hydride Vapor Phase Epitaxy

David C. Look, S. S. Park, Richard J. Molnar, 2003 .

Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire

M. Pessa, Jari Likonen, Jaakko Keränen, 2002 .

Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

Jari Likonen, Izabella Grzegory, Michal Leszczynski, 2001 .