Thierry Conard

发表

Combination of high‐resolution RBS and angle‐resolved XPS: accurate depth profiling of chemical states

Wilfried Vandervorst, Kaoru Nakajima, Kenji Kimura, 2008 .

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

Z. Li, Luigi Pantisano, Tom Schram, 2007, Microelectron. Reliab..

A new scaling issue in the electrical behaviour of damascene vs. plasma-etched interconnects

Karen Maex, Werner Boullart, Joris Proost, 1998 .

Observation and characterization of defects in HfO2 high-K gate dielectric layers

Stefan De Gendt, Olivier Richard, Matty Caymax, 2005, Microelectron. Reliab..

Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors

Anabela Veloso, Olivier Richard, I. Debusschere, 2007, Microelectron. Reliab..

CNT EUV pellicle tunability and performance in a scanner-like environment

Marina Y. Timmermans, Cedric Huyghebaert, Ivan Pollentier, 2021, Advanced Lithography.

Carbon nanotube EUV pellicle tunability and performance in a scanner-like environment

Marina Y. Timmermans, Cedric Huyghebaert, Ivan Pollentier, 2021, Journal of Micro/Nanopatterning, Materials, and Metrology.

Characterization of Atomic-Beam Deposited GeO1-xNx/HfO2 Stacks on Ge

Marc Heyns, Marc Meuris, Matty Caymax, 2006 .

Organic and perovskite solar cells for space applications

Steven Nagels, Rob Cornelissen, Wouter Maes, 2017, Solar Energy Materials and Solar Cells.

Effect of hafnium germanate on the interface of HfO2/germanium metal oxide semiconductor devices

Stefan De Gendt, Marc Heyns, Marc Meuris, 2006 .

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Wilfried Vandervorst, Martin A. Green, David A. Muller, 2002 .

Evaluation of Time‐of‐Flight Secondary Ion Mass Spectrometry for Metal Contamination Monitoring on Si Wafer Surfaces

Wilfried Vandervorst, S. De Gendt, Renaat Gijbels, 2000 .

NiB Capping of Cu landing pads for thermocompression bonding

Erik Jan Marinissen, Joeri De Vos, Luke England, 2014 .

Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors

Christoph Adelmann, Bart Schepers, Geoffrey Pourtois, 2012 .

Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

Marc Heyns, Matty Caymax, S. De Gendt, 2006 .

Effect of Postdeposition Anneal Conditions on Defect Density of HfO2 Layers Measured by Wet Etching

S. De Gendt, Annelies Delabie, Chao Zhao, 2004 .

Depth-profiling of vertical sidewall nanolayers on structured wafers by grazing incidence X-ray flourescence

Philipp Hönicke, Burkhard Beckhoff, Michael Kolbe, 2008 .

Vanadium dioxide for selector applications

Iuliana Radu, Stefan De Gendt, Marc Heyns, 2013 .

Process Study and Characterization of VO2 Thin Films Synthesized by ALD Using TEMAV and O3 Precursors

Iuliana Radu, Christoph Adelmann, Marc Schaekers, 2012 .

Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

Iuliana Radu, Wilfried Vandervorst, Stefan De Gendt, 2017 .

High k dielectric materials prepared by atomic layer CVD

Richard Carter, Guido Groeseneken, Wilfried Vandervorst, 2001 .

High-k dielectrics for future generation memory devices (Invited Paper)

Christoph Adelmann, Ben Kaczer, Dirk Wouters, 2009 .

Issues, achievements and challenges towards integration of high-k dielectrics

Richard Carter, Guido Groeseneken, L. Pantisano, 2002 .

Effect of bake/cure temperature of an advanced organic ultra low-k material on the interface adhesion strength to metal barriers

Marianna Pantouvaki, Kris Vanstreels, Patrick Verdonck, 2011 .

Invited) Vanadium Dioxide for Selector Applications

Iuliana Radu, Stefan De Gendt, Marc Heyns, 2013 .

Studies of Copper Surfaces modified by Thermal and Plasma Treatments

Karen Maex, Gerald Beyer, Mikhail R. Baklanov, 2000 .

On the Nature of Weak Spots in High-k Layers Submitted to Anneals

Wilfried Vandervorst, Olivier Richard, Annelies Delabie, 2004 .

Grazing Incidence-X-ray Fluorescence Spectrometry for the Compositional Analysis of Nanometer-Thin High-κDielectric HfO_2 Layers

David Hellin, Stefan De Gendt, Annelies Delabie, 2005, Analytical sciences : the international journal of the Japan Society for Analytical Chemistry.

Cleaning and Surface Preparation for SiGe and Ge Channel Device

Rita Vos, Hiroaki Takahashi, Paul Mertens, 2012 .