V. Derycke

Fast and compact simulation models for a variety of FET nano devices by the CMOS EKV equations

T. Serrano-Gotarredona, B. Linares-Barranco, D. Vuillaume, 2009, 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO).

Characterization of Carbon Nanotube Field Effect Transistors using an active load pull LSNA setup

D. Ducatteau, C. Gaquiere, G. Dambrine, 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

Carbon nanotube field effect transistors - fabrication, device physics, and circuit implications

R. Martel, V. Derycke, H. Wong, 2003, 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..

1D electronic properties in temperature-induced c(4×2) to 2×1 transition on the β-SiC(100) surface

Luisa Ferrari, L. Di Cioccio, P. Soukiassian, 2000 .

Self-organized 1D nanostructures on the β-SiC(100) surface: silicon atomic lines and dimer vacancy chains

J. Gautier, Gérald Dujardin, P. Soukiassian, 2000 .

Carbon nanotube field-effect transistors and logic circuits

R. Martel, V. Derycke, S. Wind, 2002, Proceedings 2002 Design Automation Conference (IEEE Cat. No.02CH37324).

Electro-grafted organic memristors: Properties and prospects for artificial neural networks based on STDP

V. Derycke, V. Derycke, Jacques-Olivier Klein, 2014, 14th IEEE International Conference on Nanotechnology.

Scanning tunneling microscopy investigation of the C-terminated β-SiC(100) c(2×2) surface reconstruction: dimer orientation, defects and antiphase boundaries

Gérald Dujardin, P. Soukiassian, V. Derycke, 2000 .

An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications

G. Dambrine, H. Happy, V. Derycke, 2006, IEEE Electron Device Letters.