Runsheng Wang

发表

New device technologies of integrated circuit in post-Moore era

Ru Huang, Ming Li, Xia An, 2012 .

Line extraction in multispectral images

Runsheng Wang, Eryong She, 2003, SPIE Asia-Pacific Remote Sensing.

Lithological discrimination using hyperspectral remote sensing

Runsheng Wang, Qinghua Wang, Xiaofang Guo, 1998, Asia-Pacific Environmental Remote Sensing.

Multipose face recognition in a complex background

Runsheng Wang, Changren Zhu, 2001, International Symposium on Multispectral Image Processing and Pattern Recognition.

Regional-scale mineral mapping using ASTER VNIR/SWIR data and validation of reflectance and mineral map products using airborne hyperspectral CASI/SASI data

Zhao Yingjun, Runsheng Wang, Tian Feng, 2014, Int. J. Appl. Earth Obs. Geoinformation.

Temperature and emissivity separation and mineral mapping based on airborne TASI hyperspectral thermal infrared data

Runsheng Wang, Shimin Zhang, Jingfa Zhang, 2015, Int. J. Appl. Earth Obs. Geoinformation.

A New MRF Framework with Dual Adaptive Contexts for Image Segmentation

Ping Zhong, Fang Liu, Runsheng Wang, 2007 .

Senputing: An Ultra-Low-Power Always-On Vision Perception Chip Featuring the Deep Fusion of Sensing and Computing

Fei Qiao, Cheng Zhuo, Runsheng Wang, 2021, IEEE Transactions on Circuits and Systems I: Regular Papers.

Can Emerging Computing Paradigms Help Enhancing Reliability Towards the End of Technology Roadmap?

Ru Huang, Weikang Qian, Runsheng Wang, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

TD-SRAM: Time-Domain-Based In-Memory Computing Macro for Binary Neural Networks

Ru Huang, Yuan Wang, Runsheng Wang, 2021, IEEE Transactions on Circuits and Systems I: Regular Papers.

Approximate Logic Synthesis in the Loop for Designing Low-Power Neural Network Accelerator

Ru Huang, Weikang Qian, Runsheng Wang, 2021, 2021 IEEE International Symposium on Circuits and Systems (ISCAS).

Characteristics of NBTI in Multi-gate FETs for Highly Scaled CMOS Technology

Ru Huang, Runsheng Wang, Ming Li, 2014 .

Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain

Ru Huang, Runsheng Wang, Runsheng Wang, 2009 .

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

Xing Zhang, Ru Huang, Donggun Park, 2008, IEEE Transactions on Electron Devices.

Characterization of Random Telegraph Noise in Scaled High-κ/Metal-Gate MOSFETs with SiO2/HfO2 Gate Dielectrics

Ru Huang, Meng Li, Runsheng Wang, 2013 .

Experimental study on quasi-ballistic transport in silicon nanowire transistors and the impact of self-heating effects

Ru Huang, Donggun Park, Runsheng Wang, 2008, 2008 IEEE International Electron Devices Meeting.

Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

Ru Huang, Yu Tian, Donggun Park, 2009, IEEE Electron Device Letters.

Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs

Ru Huang, Runsheng Wang, Yangyuan Wang, 2011, IEEE Transactions on Electron Devices.

Corrections to “Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs” [Oct 11 3379-3387]

Ru Huang, Runsheng Wang, Yangyuan Wang, 2012 .

New observations of suppressed randomization in LER/LWR of Si nanowire transistors: Experiments and mechanism analysis

Ru Huang, Runsheng Wang, Yangyuan Wang, 2010, 2010 International Electron Devices Meeting.

Investigation of sheet metal forming by bending—Part II. Plastic wrinkling of circular sheets pressed by cylindrical punches

Runsheng Wang, Tongxi Yu, Runsheng Wang, 1989 .

High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

Ru Huang, Runsheng Wang, Zhenfeng Zhang, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire MOSFETs: Characteristic Modeling and the Impact on Circuit Aging

Ru Huang, Donggun Park, Runsheng Wang, 2010, IEEE Transactions on Electron Devices.

A novel nitrogen-doped SiOx resistive switching memory with low switching voltages

Ru Huang, Runsheng Wang, Yangyuan Wang, 2010, 2010 Silicon Nanoelectronics Workshop.

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Ru Huang, Xing Zhang, Xin Huang, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Accelerated Aging in Analog and Digital Circuits With Feedback

Ru Huang, Yu Cao, Abinash Mohanty, 2015, IEEE Transactions on Device and Materials Reliability.

Investigation of sheet metal forming by bending—Part III: Applicability of deformation theory to stamping of circular sheets

Runsheng Wang, Tongxi Yu, Runsheng Wang, 1989 .

Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization

Ru Huang, Donggun Park, Runsheng Wang, 2011, IEEE Transactions on Electron Devices.

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

Ru Huang, Runsheng Wang, Yangyuan Wang, 2010, IEEE Transactions on Electron Devices.

Quasi-SOI MOSFETs—A Promising Bulk Device Candidate for Extremely Scaled Era

Xing Zhang, Ru Huang, Yu Tian, 2007, IEEE Transactions on Electron Devices.

A comprehensive study on Schottky barrier nanowire transistors (SB-NWTs): Principle, physical limits and parameter fluctuations

Ru Huang, Runsheng Wang, Zhaoyi Kang, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

High-Performance BOI FinFETs Based on Bulk-Silicon Substrate

Ru Huang, Xing Zhang, Runsheng Wang, 2008, IEEE Transactions on Electron Devices.

Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

Ru Huang, Zhuoqing Yu, Runsheng Wang, 2020, IEEE Transactions on Electron Devices.

Estimation of the plastic structural response under impact

Runsheng Wang, Tongxi Yu, Yonggang Huang, 1986 .

New understanding of the statistics of random telegraph noise in Si nanowire transistors - the role of quantum confinement and non-stationary effects

Ru Huang, Runsheng Wang, Yangyuan Wang, 2011, 2011 International Electron Devices Meeting.

Predictive modeling of capacitance and resistance in gate-all-around cylindrical nanowire MOSFETs for parasitic design optimization

Ru Huang, Runsheng Wang, Jibin Zou, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Experimental Demonstration of Current Mirrors Based on Silicon Nanowire Transistors for Inversion and Subthreshold Operations

Ru Huang, Runsheng Wang, Yangyuan Wang, 2011, IEEE Transactions on Electron Devices.

New insights into oxide traps characterization in gate-all-around nanowire transistors with TiN metal gates based on combined Ig-Id RTS technique

Ru Huang, Donggun Park, Runsheng Wang, 2006, 2009 Symposium on VLSI Technology.

New insights into oxide traps characterization in gate-all-around nanowire transistors with TiN metal gates based on combined I g -I d RTS technique

Ru Huang, Donggun Park, Runsheng Wang, 2006, VLSIT 2006.

Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

Ru Huang, Xing Zhang, Yu Tian, 2007, IEEE Transactions on Electron Devices.

Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs From Top-Down Approach

Ru Huang, Donggun Park, Runsheng Wang, 2009, IEEE Electron Device Letters.

Experimental investigations on channel backscattering characteristics of gate-all-around silicon nanowire transistors from top-down approach

Ru Huang, Donggun Park, Runsheng Wang, 2008 .

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate From Top-Down Approach: Simulation and Fabrication

Ru Huang, Xing Zhang, Yu Tian, 2010, IEEE Transactions on Nanotechnology.

Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization

Ru Huang, Xiaobo Jiang, Zhe Zhang, 2018, IEEE Transactions on Electron Devices.

Impacts of non-negligible electron trapping/detrapping on the NBTI characteristics in silicon nanowire transistors with TiN metal gates

Ru Huang, Donggun Park, Runsheng Wang, 2008, 2008 IEEE International Electron Devices Meeting.

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II–Experimental Results and Impacts on Device Variability

Ru Huang, David Z. Pan, Xiaobo Jiang, 2013, IEEE Transactions on Electron Devices.

Impacts of metastable defect states on gate oxide trapping in nanoscale MOS devices

Ru Huang, Runsheng Wang, Dongyuan Mao, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).

A new efficient method for characterizing time constants of switching oxide traps

Ru Huang, Xing Zhang, Zhuoqing Yu, 2014, 2014 IEEE International Reliability Physics Symposium.

Investigation of Parasitic Effects and Design Optimization in Silicon Nanowire MOSFETs for RF Applications

Ru Huang, Xing Zhang, Runsheng Wang, 2008, IEEE Transactions on Electron Devices.

New Self-Aligned Silicon Nanowire Transistors on Bulk Substrate Fabricated by Epi-Free Compatible CMOS Technology: Process Integration, Experimental Characterization of Carrier Transport and Low Frequency noise

Ru Huang, Xing Zhang, Yu Tian, 2007, 2007 IEEE International Electron Devices Meeting.

Investigation of sheet metal forming by bending—Part I. Axisymmetric elastic-plastic bending of circular sheets pressed by cylindrical punches

Runsheng Wang, Tongxi Yu, Runsheng Wang, 1989 .

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

Ru Huang, Zhuoqing Yu, Runsheng Wang, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Investigation of sheet metal forming by bending—Part IV: Bending and wrinkling of circular sheets pressed by a hemispherical punch

Runsheng Wang, Tongxi Yu, Runsheng Wang, 1989 .

New understanding on the single-trap response under NBTI stress and the resulted stochastic degradation in nanoscale MOSFETs

Ru Huang, Pengpeng Ren, Runsheng Wang, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.