M. J. McCollum

Incorporation Of Residual Donor Impurities In High Purity Epitaxial Indium Phosphide

G. E. Stillman, B. Lee, M. H. Kim., 1989, Other Conferences.

Growth‐induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs

G. E. Stillman, S. L. Jackson, M. J. McCollum, 1990 .

Low - Temperature Defect - Induced Aging of GaAs Grown by Molecular Beam Epitaxy

G. E. Stillman, M. J. McCollum, I. Szafranek, 1990 .

Anomalous Luminescence Properties of GaAs grown by Molecular Beam Epitaxy

G. E. Stillman, S. L. Jackson, M. J. McCollum, 1989 .

Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride

Brian T. Cunningham, G. E. Stillman, M. J. McCollum, 1989 .