J. P. Bergman

发表

Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures

Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, 2003, Saratov Fall Meeting.

Mechanism for rapid thermal annealing improvements in undoped GaNxAs1−x/GaAs structures grown by molecular beam epitaxy

C. W. Tu, Irina Buyanova, P. N. Hai, 2000 .

Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition

Robert F. Davis, Michael D. Bremser, Tanya Paskova, 2001 .

Recombination of free and bound excitons in GaN

T. V. Shubina, Plamen Paskov, Bo Monemar, 2008 .

Properties and origins of different stacking faults that cause degradation in SiC PiN diodes

H. Lendenmann, Christer Hallin, Henrik Jacobson, 2004 .

A 3 kV Schottky barrier diode in 4H-SiC

Tsunenobu Kimoto, Qamar Ul Wahab, Anne Henry, 1998 .

The minority carrier lifetime of n‐type 4H‐ and 6H‐SiC epitaxial layers

Christer Hallin, J. P. Bergman, Erik Janzén, 1996 .

Photoluminescence of a ‐plane GaN: comparison between MOCVD and HVPE grown layers

James S. Speck, Shuji Nakamura, Detlef Hommel, 2006 .

Schottky versus bipolar 3.3 kV SiC diodes

J. Millan, Amador Pérez-Tomás, Xavier Jordà, 2008 .

TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF GAN EPILAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY ON AN ALN BUFFER LAYER ON (111) SI

Marek Godlewski, Bo Monemar, J. P. Bergman, 1996 .

INFLUENCE OF STRAIN CONDITIONS ON EXCITON DYNAMICS AND ON THERMAL STABILITY OF PHOTOLUMINESCENCE OF ZNCDSE/ZNSE QUANTUM WELLS

Detlef Hommel, Marek Godlewski, E. Kurtz, 1996 .

A 4.5 kV 6H silicon carbide rectifier

Anne Henry, Susan Savage, J. P. Bergman, 1995 .

Linköping University Electronic Press

Anne Henry, Jawad ul Hassan, J. P. Bergman, 2012 .

Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

H. Amano, Per-Olof Holtz, Bo E. Sernelius, 1999 .

Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

C. W. Tu, Irina Buyanova, Bo Monemar, 1999 .