Osamu Oda

发表

Developments of GaN Bulk Substrates for GaN Based LEDs and LDs

Akira Yoshida, Osamu Oda, Takayuki Inoue, 2000 .

High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators

Naohiro Shimizu, Takeshi Sakuma, Takayuki Sekiya, 2006 .

Image display arrangement.

Osamu Oda, Toshio Amano, Yoshihisa Fujioka, 1985 .

Custom menu system for hierarchical menu and television system so

Hiroyuki Segawa, Osamu Oda, Masaharu Fukumoto, 1997 .

Video signal source selection system

Osamu Oda, Norihito Ichikawa, Toshio Amano, 1987 .

Wear of Current Collection System in High Speed Electric Railway

Osamu Oda, 1984 .

Annealing Conditions for Fe Doped Semi-Insulating InP

T. Inoue, Osamu Oda, K. Kainosho, 1989, Other Conferences.

Prostensaeurederivate and process for their manufacture

Osamu Oda, Kiyoshi Sakai, Takashi Yusa, 1973 .

1101 Investigation of Tailless Aircraft by ANSYS

Osamu Oda, Yoshifumi Ogami, Shunsuke Hazama, 2005 .

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Takashi Jimbo, Masayoshi Umeno, Osamu Oda, 2002 .

GaN quantum dots doped with Eu

Osamu Oda, Eva Monroy, Le Si Dang, 2004 .

Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale

Osamu Oda, Akihiro Wakahara, Takenori Yamamoto, 1999 .

Chapter 4 InP Crystal Growth, Substrate Preparation and Evaluation

Osamu Oda, K. Kainosho, O. Oda, 1990 .

GaN epitaxial growth on neodium gallate substrates

Osamu Oda, K. Aiki, H. Okazaki, 1997 .

ZnTe pure green light-emitting diodes fabricated by thermal diffusion

Osamu Oda, M. Uchida, Toshiaki Asahi, 2000 .

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Osamu Oda, Keiichiro Asai, Hiroyasu Ishikawa, 2004 .