Satoshi Kurai

发表

Developments of GaN Bulk Substrates for GaN Based LEDs and LDs

Akira Yoshida, Osamu Oda, Takayuki Inoue, 2000 .

Effect of pre-treatment of GaN substrate for homoepitaxial growth by rf MBE

Satoshi Kurai, Tsunemasa Taguchi, Shuichi Kubo, 2000, SPIE Photonics Taiwan.

Correlation between dislocations and luminescence in GaN

Tamoya Sugahara, Satoshi Kurai, Shiro Sakai, 1998, Other Conferences.

Growth of homoepitaxial GaN layers and GaN/AlGaN multiple quantum wells on GaN single-crystal substrates by molecular-beam epitaxy

Tomoyuki Tanabe, Satoshi Kurai, Tsunemasa Taguchi, 2002, SPIE Optics + Photonics.

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Satoshi Kurai, Hisao Sato, Kenji Yamashita, 1998 .

Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition

Satoshi Kurai, Yoshiki Naoi, Shiro Sakai, 1996 .

Superior Illuminant Characteristics of Color Rendering and Luminous Efficacy in Multilayered Phosphor Conversion White Light Sources Excited by Near-Ultraviolet Light-Emitting Diodes

Satoshi Kurai, Tsunemasa Taguchi, Yuji Uchida, 2009 .

A novel colonoscope with high color-rendering white light-emitting diodes.

Satoshi Kurai, Isao Sakaida, Jun Nishikawa, 2011, Gastrointestinal endoscopy.

Growth of homoepitaxial III‐nitride layers on bulk GaN single crystals by molecular‐beam epitaxy

Satoshi Kurai, Tsunemasa Taguchi, Shuichi Kubo, 2003 .

Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs

Satoshi Kurai, Tsunemasa Taguchi, Yuji Uchida, 2008 .