H. Bender

发表

In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction

Stefan De Gendt, G. Roebben, Marc M. Heyns, 2001, Microelectron. Reliab..

Ultra thin hybrid floating gate and high-k dielectric as IGD enabler of highly scaled planar NAND flash technology

S. Locorotondo, L. Breuil, P. Blomme, 2012, 2012 International Electron Devices Meeting.

A 0.314/spl mu/m/sup 2/ 6T-SRAM cell build with tall triple-gate devices for 45nm applications using 0.75NA 193nm lithography

R. Rooyackers, M. Van Hove, K. Ronse, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, Stefaan Decoutere, Xuanwu Kang, 2012, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).