Xianfeng Ni

发表

Reduction of efficiency droop in InGaN-based blue LEDs

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2009, OPTO.

Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, Keith R. Evans, 2009, OPTO.

On carrier spillover in c- and m-plane InGaN light-emitting diodes

Hadis Morkoç, Xianfeng Ni, Keith R. Evans, 2010, OPTO.

AFM and CAFM studies of ELO GaN films

Hadis Morkoç, Xianfeng Ni, J. C. Moore, 2007, SPIE OPTO.

Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

Evolution of surface morphology of polar and nonpolar GaN thin films during photoelectrochemical etching

Hadis Morkoç, Xianfeng Ni, Jacob H. Leach, 2008, SPIE OPTO.

Measurements of gate lag in high-quality nearly lattice matched InAlN/AlN/GaN HFET structures

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2010, OPTO.

Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire

Hadis Morkoç, Xianfeng Ni, J. Xie, 2008, SPIE OPTO.

Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2010, OPTO.

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

Magneto-transport properties of MOVPE-grown AlxGa1-xN/AlN/GaN heterostructures with high-mobility two-dimensional electron gas

Cagliyan Kurdak, Hadis Morkoç, Xianfeng Ni, 2007, SPIE OPTO.

AlxIn1-xN/GaN heterostructure field effect transistors

Hadis Morkoç, Xianfeng Ni, Jacob H. Leach, 2008, SPIE OPTO.

GaN-based vertical cavities on highly reflective and crack-free nitride distributed Bragg reflectors

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2009, OPTO.

Effect of UV exposure on the surface charge behavior for GaN

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2010, OPTO.

Kelvin probe measurements of p-type GaN

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2011, OPTO.

Internal quantum efficiency of m-plane InGaN on Si and GaN

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2010, OPTO.

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, V. Avrutin, 2010 .

Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2009 .

Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates

Hadis Morkoç, Xianfeng Ni, Zuzanna Liliental-Weber, 2006 .

Epitaxial lateral overgrowth of non-polar GaN( 1 1̄ 0 0) on Si(1 1 2) patterned substrates by MOCVD

Sebastian Metzner, Hadis Morkoç, Lin Zhou, 2011 .

Ballistic transport in InGaN-based LEDs: impact on efficiency

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011 .

Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy

Hadis Morkoç, Xianfeng Ni, Q. Fan, 2006 .

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Bias dependent two-channel conduction in InAlN/AlN/GaN structures

Jerry R. Meyer, Cagliyan Kurdak, Hadis Morkoç, 2010 .

Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2006 .

Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, Ü. Özgür, 2009 .

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

I-V characteristics of Au∕Ni Schottky diodes on GaN with SiNx nanonetwork

Hadis Morkoç, Xianfeng Ni, S. Chevtchenko, 2006 .

InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN

Hadis Morkoç, Xiang Li, Xianfeng Ni, 2011 .

The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Reactive ion etch damage on GaN and its recovery

Sang-Jun Cho, Hadis Morkoç, Xianfeng Ni, 2006 .

Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures

Cagliyan Kurdak, Hadis Morkoç, Xianfeng Ni, 2010 .

High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2007 .

Defect reduction in (112¯0) a-plane GaN by two- stage epitaxial lateral overgrowth

Necmi Biyikli, Hadis Morkoç, Xianfeng Ni, 2006 .

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Xing Li, Cagliyan Kurdak, Hadis Morkoç, 2009 .

Study of SiNx and SiO2 passivation of GaN surfaces

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2007 .

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

Hadis Morkoç, Xianfeng Ni, Jacob H. Leach, 2009 .

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Hadis Morkoç, Lin Zhou, Xianfeng Ni, 2010 .