Ümit Özgür

发表

Reduction of efficiency droop in InGaN-based blue LEDs

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2009, OPTO.

Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements

Hadis Morkoç, Ümit Özgür, Shopan Hafiz, 2014, Photonics West - Optoelectronic Materials and Devices.

Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2015, Photonics West - Optoelectronic Materials and Devices.

Enhancement of coherent acoustic phonons in InGaN multiple quantum wells

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2015, Photonics West - Optoelectronic Materials and Devices.

Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2014, Photonics West - Optoelectronic Materials and Devices.

Pyramid nano-voids in GaN and InGaN

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2012, OPTO.

Carrier relaxation and stimulated emission in ZnO nanorods grown by catalyst-assisted vapor transport on various substrates

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2007, SPIE OPTO.

Determination of carrier diffusion length in p- and n-type GaN

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2014, Photonics West - Optoelectronic Materials and Devices.

Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors

Hadis Morkoç, Ümit Özgür, Xing Li, 2011, OPTO.

Quaternary BeMgZnO by plasma-enhanced molecular beam epitaxy for BeMgZnO/ZnO heterostructure devices

Hadis Morkoç, Ümit Özgür, David J. Smith, 2017, OPTO.

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2015, Photonics West - Optoelectronic Materials and Devices.

Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition

Necmi Biyikli, Hadis Morkoç, Ümit Özgür, 2007, SPIE OPTO.

Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2011, OPTO.

Recombination dynamics in non-polar m-plane GaN investigated by time- and polarization-resolved photoluminescence

Hadis Morkoç, Ümit Özgür, Shopan Hafiz, 2013, Photonics West - Optoelectronic Materials and Devices.

Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy

Hadis Morkoç, Ümit Özgür, Q. Fan, 2007, SPIE OPTO.

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

Impact of ballistic electron transport on efficiency of InGaN based LEDs

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2011, OPTO.

Window for better reliability of nitride heterostructure field effect transistors

Hadis Morkoç, Ümit Özgür, Vitaliy Avrutin, 2012, Microelectron. Reliab..

Microwave performance of AlGaN/AlN/GaN-based single and coupled channels HFETs

Hadis Morkoç, Ümit Özgür, Xiang Li, 2013, Photonics West - Optoelectronic Materials and Devices.

Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire

Hadis Morkoç, Xianfeng Ni, J. Xie, 2008, SPIE OPTO.

Low dislocation density GaN grown by MOCVD with SiNx nano-network

John V. Foreman, Hadis Morkoç, Ümit Özgür, 2007, SPIE OPTO.

Spin-orbit coupling in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas

Cagliyan Kurdak, Vladimir Litvinov, Hadis Morkoç, 2008, SPIE OPTO.

Measurements of off-state electrical stress in InAlN/AlN/GaN heterostructure field-effect transistors with varying In compositions

Hadis Morkoç, Ümit Özgür, Cemil Kayis, 2012, OPTO.

Finite size narrow-band transmission filters for real-time short wave IR spectroscopy and imaging

Nibir K. Dhar, Ümit Özgür, Erdem Topsakal, 2018, Commercial + Scientific Sensing and Imaging.

GaN-based vertical cavity lasers with semiconductor/dielectric and all dielectric reflectors

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2013, Photonics West - Optoelectronic Materials and Devices.

Molecular beam epitaxy of Zn-polar ZnO/BeMgZnO heterostructure field effect transistors on GaN and c-sapphire: a comparative study

Kai Ding, Hadis Morkoç, Ümit Özgür, 2020, OPTO.

Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot-phonon effects

Hadis Morkoç, Ümit Özgür, Xiang Li, 2012, OPTO.

GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels

Xing Li, Hadis Morkoç, Ümit Özgür, 2010, Proceedings of the IEEE.

The impact of active layer design on quantum efficiency of InGaN light emitting diodes

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2012, OPTO.

Ferromagnetism in ZnO- and GaN-Based Diluted Magnetic Semiconductors: Achievements and Challenges

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2010, Proceedings of the IEEE.

Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013, Photonics West - Optoelectronic Materials and Devices.

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

Sebastian Metzner, Hadis Morkoç, Lin Zhou, 2011, OPTO.

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2014, Photonics West - Optoelectronic Materials and Devices.

Transient current spectroscopy of lattice matched InAlN/AlN/GaN HFETs for identification of traps resulting in gate lag

Hadis Morkoç, Ümit Özgür, J. Xie, 2009, OPTO.

Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015, Photonics West - Optoelectronic Materials and Devices.

Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012, OPTO.

Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

Sebastian Metzner, David J. Smith, Hadis Morkoç, 2012, OPTO.

Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Microwave Ferrites, Part 1: Fundamentals and self biasing

Hadis Morkoç, Ümit Özgür, Yahya Alivov, 2009 .

Strong carrier localization in stacking faults in semipolar (11-22) GaN

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2013, Photonics West - Optoelectronic Materials and Devices.

Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2012, OPTO.

Epitaxial lateral overgrowth of (11¯00) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition

Hadis Morkoç, Ümit Özgür, S. Chevtchenko, 2008, SPIE OPTO.

Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015, Photonics West - Optoelectronic Materials and Devices.

Exciton localization and large Stokes shift in quaternary BeMgZnO grown by molecular beam epitaxy

Hadis Morkoç, Ümit Özgür, Shopan Hafiz, 2016, SPIE OPTO.

Electrical properties of ZnO:Ga as a transparent conducting oxide in InGaN based light emitting diodes

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2012, OPTO.

ZnO Devices and Applications: A Review of Current Status and Future Prospects

Daniel Hofstetter, Hadis Morkoç, Ümit Özgür, 2010, Proceedings of the IEEE.

InGaN based multi-double heterostructure light-emitting diodes with electron injector layers

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2013, Photonics West - Optoelectronic Materials and Devices.

Measurements of generation‐recombination effect by low‐frequency phase‐noise technique in AlGaN/GaN MOSHFETs

Peter Händel, Hadis Morkoç, Xiang Li, 2011 .

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells

Ümit Özgür, H. C. Casey, Henry O. Everitt, 2000 .

InGaN light-emitting diodes: Efficiency-limiting processes at high injection

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2013 .

Determination of carrier diffusion length in GaN

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015 .

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Hadis Morkoç, Ümit Özgür, Kęstutis Jarašiūnas, 2012 .

Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2009 .

Epitaxial lateral overgrowth of non-polar GaN( 1 1̄ 0 0) on Si(1 1 2) patterned substrates by MOCVD

Sebastian Metzner, Hadis Morkoç, Lin Zhou, 2011 .

Ballistic transport in InGaN-based LEDs: impact on efficiency

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011 .

Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

S. S. Park, Hadis Morkoç, Ümit Özgür, 2005 .

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Optical and electrical properties of ZnMnO layers grown by peroxide MBE

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2006 .

Recent Development of Boron Nitride towards Electronic Applications

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2017 .

Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

Atilla Aydinli, Hadis Morkoç, Ümit Özgür, 2017 .

Bias dependent two-channel conduction in InAlN/AlN/GaN structures

Jerry R. Meyer, Cagliyan Kurdak, Hadis Morkoç, 2010 .

Optical and Magnetic Properties of ZnO:V Prepared by Ion Implantation

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2007 .

Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects

Hadis Morkoç, Xiang Li, Ümit Özgür, 2011 .

Carrier dynamics under two‐ and single‐photon excitation in bulk GaN

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012 .

Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2006 .

Refractive indices and absorption coefficients of MgxZn1−xO alloys

A. K. Sharma, John F. Muth, Ümit Özgür, 2000 .

Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique

Hadis Morkoç, Xiang Li, Ümit Özgür, 2011 .

Thermal conductivity of bulk ZnO after different thermal treatments

Sang-Jun Cho, Fred H. Pollak, Hadis Morkoç, 2006 .

Saga of efficiency degradation at high injection in InGaN light emitting diodes

Enrico Bellotti, Hadis Morkoç, Ümit Özgür, 2014 .

Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

Hadis Morkoç, Xiang Li, Ümit Özgür, 2012 .

Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013 .

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Hadis Morkoç, Xiang Li, Ümit Özgür, 2013 .

InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN

Hadis Morkoç, Xiang Li, Xianfeng Ni, 2011 .

The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

Liang Dong, Hadis Morkoç, Ümit Özgür, 2013 .

Carrier dynamics in bulk GaN

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012 .

An alternative material for transparent antennas for commercial and medical applications

Hadis Morkoç, Ümit Özgür, Erdem Topsakal, 2017 .

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures

Cagliyan Kurdak, Hadis Morkoç, Xianfeng Ni, 2010 .

Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013 .

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Ekmel Ozbay, Hadis Morkoç, Ümit Özgür, 2009 .

High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2007 .

Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes

Hadis Morkoç, Ümit Özgür, Milos Nesladek, 2012 .

Defect reduction in (112¯0) a-plane GaN by two- stage epitaxial lateral overgrowth

Necmi Biyikli, Hadis Morkoç, Xianfeng Ni, 2006 .

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Xing Li, Cagliyan Kurdak, Hadis Morkoç, 2009 .

The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes

Hadis Morkoç, Ümit Özgür, Shopan Hafiz, 2013 .