Peder Bergman

Carrier and exciton dynamics in In0.15Ga0.85 NGaN multiple quantum well structures

Hiroshi Amano, Isamu Akasaki, Bo Monemar, 1999, Photonics West.

Characterisation and Defects in Silicon Carbide

H. Lendenmann, Björn Magnusson, L. Storasta, 2002 .

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

H. Bleichner, H. Lendenmann, Christer Hallin, 2002 .

Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

H. Lendenmann, P. Skytt, Peder Bergman, 2001 .

Radiative Recombination in InGaN/GaN Multiple Quantum Wells

Isamu Akasaki, Hiroshi Amano, Bo Monemar, 2000 .

SiC Crystal Growth by HTCVD

Björn Magnusson, Peder Bergman, Erik Janzén, 2004 .

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

John W. Palmour, H. Lendenmann, Marek Skowronski, 2006 .

Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

H. Lendenmann, P. Skytt, N. Johansson, 2001 .

Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

H. Lendenmann, Christer Hallin, Fanny Dahlquist, 2003 .

Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

Carl-Mikael Zetterling, Arash Salemi, Hossein Elahipanah, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).