H. Ishikawa

A 1.1V 3.1-to-9.5GHz MB-OFDM UWB transceiver in 90nm CMOS

Hiroshi Kodama, A. Tanaka, H. Okada, 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

H. Ishikawa, T. Egawa, T. Egawa, 2005, IEEE Electron Device Letters.

Growth of GaN on 4‐inch Si substrate with a thin AlGaN/AlN intermediate layer

H. Ishikawa, T. Egawa, T. Jimbo, 2003 .

Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

T. Tanaka, T. Ueda, H. Ishikawa, 2005, IEEE Transactions on Electron Devices.