D. Langley

Topological constraints of gate-level circuits obtained through standard cell recognition (SCR)

M. K. Seery, L. A. Hsia, G. Vernizzi, 2015, 2015 National Aerospace and Electronics Conference (NAECON).

RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

A. Crespo, H. G. Henry, D. Langley, 2007, IEEE Electron Device Letters.

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

A. Crespo, D. Langley, G. Jessen, 2007, IEEE Transactions on Electron Devices.

Processing Methods for Low Ohmic Contact Resistance in AlN/GaN MOSHEMTs

David H. Tomich, V. Miller, Antonio Crespo, 2009 .