H. Baudry

Integration and optimisation of a high performance RF lateral DMOS in an advanced BiCMOS technology

B. Szelag, A. Giry, D. Pache, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

100GHz SiGe:C HBTs using non selective base epitaxy

D. Bensahel, M. Laurens, A. Chantre, 2001, 31st European Solid-State Device Research Conference.

An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter

D. Dutartre, F. Saguin, A. Chantre, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

BiCMOS7RF: a highly-manufacturable 0.25-/spl mu/m BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy

B. Szelag, M. Laurens, F. Saguin, 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).