Hirokuni Tokuda

Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate

Masaaki Kuzuhara, Suzuki Ai, Asubar Joel, 2016 .

Status and Perspective of GaN-based Technology in Japan

Masaaki Kuzuhara, Hirokuni Tokuda, 2012 .

Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation (Special Issue on Heterostructure Electron Devices)

Hisao Kawasaki, Fumio Sasaki, Motoharu Ohtomo, 1993 .

High temperature electron transport properties in AlGaN/GaN heterostructures

Masaaki Kuzuhara, Hirokuni Tokuda, H. Tokuda, 2010 .

Millimeter-wave power HEMTs

Hirokuni Tokuda, Shigemitsu Arai, 1997 .

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Masaaki Kuzuhara, Hirokuni Tokuda, M. Hasan, 2013, IEEE Electron Device Letters.

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Masaaki Kuzuhara, Hirokuni Tokuda, H. Tokuda, 2016 .

Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures

Masaaki Kuzuhara, Hirokuni Tokuda, Toshikazu Kojima, 2012 .