R. Bruce

A novel self-converging write scheme for 2-bits/cell phase change memory for Storage Class Memory (SCM) application

W. C. Chien, H. L. Lung, C. J. Chen, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

ALD-based confined PCM with a metallic liner toward unlimited endurance

H. L. Lung, K. Suu, M. BrightSky, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch

V. Narayanan, M. Khater, I. Lauer, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

A no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCM : IBM/Macronix Phase Change Memory Joint Project

M. BrightSky, A. Ray, W. Kim, 2020, 2020 IEEE Symposium on VLSI Technology.

Towards the integration of both ROM and RAM functions phase change memory cells on a single die for system-on-chip (SOC) applications

W. C. Chien, H. L. Lung, J. Y. Wu, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.