Michel Bosman

发表

Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2015, 2015 IEEE International Reliability Physics Symposium.

Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices

Xing Wu, Nagarajan Raghavan, Michel Bosman, 2016, Microelectron. Reliab..

Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight

Nagarajan Raghavan, Alok Ranjan, Michel Bosman, 2016, Microelectron. Reliab..

Adding Interactivity to BalanSAR: a Spatial Augmented Reality Game for Balancing in Physical Education

Danica Mast, Sanne de Vries, Michel Bosman, 2017, CHI PLAY.

Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2014, Microelectron. Reliab..

Invited) Intrinsic Bulk Resistance Switching in Silicon Oxide

Anthony J. Kenyon, Wh Ng, Adnan Mehonic, 2017 .

Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices

Daniel D. Frey, Nagarajan Raghavan, Michel Bosman, 2014, Microelectron. Reliab..

Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM

Daniel D. Frey, Nagarajan Raghavan, Michel Bosman, 2015, 2015 IEEE International Reliability Physics Symposium.

Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2014, Microelectron. Reliab..

Multi-layered liposomes as optical resonators

Xia Yu, Wei Long Ng, Chi Chiu Chan, 2013, Photonics West - Biomedical Optics.

Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2015, Microelectron. Reliab..

An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2015, Microelectron. Reliab..

Influence of Interface Roughness on Resistance Switching in Undoped Amorphous Silicon Oxide

Anthony J. Kenyon, Wh Ng, Adnan Mehonic, 2017 .

Impact of columnar microstructure on resistive switching behaviour of amorphous silicon suboxide films

Anthony J. Kenyon, Adnan Mehonic, Michel Bosman, 2017 .

BalanSAR: Using Spatial Augmented Reality to Train Children's Balancing Skills in Physical Education

Danica Mast, Sanne de Vries, Michel Bosman, 2017, TEI.

Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach

Daniel D. Frey, Nagarajan Raghavan, Michel Bosman, 2015, Microelectron. Reliab..

Silicon Oxide ReRAM Device

Anthony J. Kenyon, Adnan Mehonic, Michel Bosman, 2016 .

Silicon oxide – a dynamic Electronic Material for Resistance Switching

Anthony J. Kenyon, Adnan Mehonic, David Gao, 2015 .

Silica: Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica (Adv. Mater. 34/2016)

Anthony J. Kenyon, Adnan Mehonic, David Gao, 2016 .

(Invited) Structural insights into resistance switching in silicon oxide: electronic and photonic perspectives

Anthony J. Kenyon, Wh Ng, Adnan Mehonic, 2017 .

(Invited) Resistance switching in silicon-rich silica: electronic, structural and photonic perspectives

Anthony J. Kenyon, Wh Ng, Adnan Mehonic, 2017 .

Invited) Structural changes and conductive filament formation in silicon oxide during resistance switching

Anthony J. Kenyon, Adnan Mehonic, Alexander L. Shluger, 2016 .

Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2013 .

Oxygen-Soluble Gate Electrodes for Prolonged High-$ \kappa$ Gate-Stack Reliability

Xing Wu, Nagarajan Raghavan, Michel Bosman, 2011, IEEE Electron Device Letters.

Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices

Anthony J. Kenyon, Wh Ng, Adnan Mehonic, 2017 .

Nanoplasmonics: classical down to the nanometer scale.

Michel Bosman, Stefan A Maier, Huigao Duan, 2012, Nano letters.

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

Hiroshi Iwai, Nagarajan Raghavan, Kuniyuki Kakushima, 2011 .

Fast Electrical Modulation in a Plasmonic‐Enhanced, V‐Pit‐Textured, Light‐Emitting Diode

Jinghua Teng, Andrew A. Bettiol, Michel Bosman, 2015 .

Direct visualization and in-depth physical study of metal filament formation in percolated high-κ dielectrics

Michel Bosman, Kin Leong Pey, Thomas Kauerauf, 2010 .

Feasibility of SILC Recovery in Sub-10-Å EOT Advanced Metal Gate–High-$\kappa$ Stacks

Xing Wu, Nagarajan Raghavan, Michel Bosman, 2013, IEEE Electron Device Letters.

Electron-energy loss study of nonlocal effects in connected plasmonic nanoprisms.

Michel Bosman, Aeneas Wiener, John B Pendry, 2013, ACS nano.

Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2011 .

Quantum Plasmon Resonances Controlled by Molecular Tunnel Junctions

Lin Wu, Michel Bosman, Ping Bai, 2014, Science.

Stochastic failure model for endurance degradation in vacancy modulated HfOx RRAM using the percolation cell framework

Daniel D. Frey, Nagarajan Raghavan, Michel Bosman, 2014, 2014 IEEE International Reliability Physics Symposium.

Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks: A nanoscopic study

Hiroshi Iwai, Kuniyuki Kakushima, Michel Bosman, 2014 .

Role of oxygen vacancies in HfO2-based gate stack breakdown

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2010 .

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2011 .

Au nanoparticle-modified MoS2 nanosheet-based photoelectrochemical cells for water splitting.

Bo Chen, Michel Bosman, Hua Zhang, 2014, Small.

Fowler-nordheim tunneling induced charge transfer plasmons between nearly touching nanoparticles

Lin Wu, Erping Li, Michel Bosman, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices

Xing Wu, Nagarajan Raghavan, Michel Bosman, 2015 .

Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress

Xing Wu, Nagarajan Raghavan, Michel Bosman, 2013 .

Interlayer interactions in 2D WS2/MoS2 heterostructures monolithically grown by in situ physical vapor deposition.

Jing Yang, Hongfei Liu, Hao Gong, 2018, Nanoscale.

Resistive switching in NiSi gate metal-oxide-semiconductor transistors

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey, 2010 .

Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

Nagarajan Raghavan, Michel Bosman, Gang Zhang, 2011, Nanotechnology.

Encapsulated Annealing: Enhancing the Plasmon Quality Factor in Lithographically–Defined Nanostructures

Michel Bosman, Lei Zhang, Huigao Duan, 2014, Scientific Reports.

Intrinsic nanofilamentation in resistive switching

Xing Wu, Nagarajan Raghavan, Michel Bosman, 2013 .

Chemical insight into origin of forming-free resistive random-access memory devices

Guo-Qiang Lo, Nagarajan Raghavan, Michel Bosman, 2011 .