J. E. Epler

发表

Impurity Induced Disordering Of Heterojunction Interfaces: Phenomenology And Laser Device Applications

R. D. Burnham, R. L. Thornton, N. Holonyak,Jr., 1987, Other Conferences.

Laser-Patterned Desorption Of GaAs In An Inverted Metalorganic Chemical Vapor Deposition Reactor

Thomas L. Paoli, David W. Treat, H. F. Chung, 1989, Photonics West - Lasers and Applications in Science and Engineering.

Laser-Assisted Processing Of GaAs-AlGaAs Optoelectronic Devices

Thomas L. Paoli, Robert L. Thornton, J. E. Epler, 1988, Photonics West - Lasers and Applications in Science and Engineering.

Fabrication and characterization of GaAs/A1GaAs quantum-well lasers using thermally oxidized A1GaAs

Bruce D. Patterson, Hans W. Lehmann, J. E. Epler, 1994, Integrated Optoelectronics.

Room‐temperature continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1987 .

High performance deep red AlAs/AlGaAs top-emitting VCSELs grown by MOVPE at high growth rates

J. E. Epler, Michael A. J. Moser, Karlheinz H. Gulden, 1997 .

Multiple wavelength Fabry–Pérot lasers fabricated by vacancy‐enhanced quantum well disordering

Daniel Hofstetter, Hans Zappe, P. Riel, 1995 .

Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity

Thomas L. Paoli, Robert D. Burnham, Robert L. Thornton, 1986 .

Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes

Michael R. Krames, Werner K. Goetz, M. Kneissl, 2006 .

Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, D. C. Hall, 1988 .

The application of quantum well solar cells to thermophotovoltaics

C. C. Button, Jenny Nelson, Ian Ballard, 1998 .

Single-growth-step GaAs/AlGaAs distributed Bragg reflector lasers with holographically-defined recessed gratings

Daniel Hofstetter, Hans Zappe, J. E. Epler, 1994 .

Magnetron Dry Etching for Photonic Device Fabrication

Hans Zappe, R. Widmer, Hans W. Lehmann, 1993 .

Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source

Thomas L. Paoli, Robert D. Burnham, Robert L. Thornton, 1987 .

Stability of 300 K continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1987 .

Mode behavior and high resolution spectra of circularly‐symmetric GaAs‐AlGaAs air‐post vertical cavity surface emitting lasers

Hans W. Lehmann, Hans Sigg, J. E. Epler, 1996 .