C. D. Young

MATERIALS, WELDING AND FABRICATION FOR THE JOLLIET PROJECT

D. E. Parks, N. W. Hein, C. J. Wall, 1990 .

Device-level PBTI-induced timing jitter increase in circuit-speed random logic operation

K. P. Cheung, J. W. Lu, G. F. Jiao, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

AN ANALYSER TO ESTIMATE SUBJECTIVE REACTION TO DIESEL ENGINE NOISE

M F Russell, C. D. Young, S A Worley, 1988 .

Performance and variability in multi-VT FinFETs using fin doping

P. Y. Hung, T. Ngai, R. Jammy, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

PBTI improvement in gate last HfO2 gate dielectric nMOSFET due to Zr incorporation

G. Bersuker, R. Jammy, P. D. Kirsch, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

New insights into SILC-based life time extraction

L. Larcher, T. Ngai, G. Bersuker, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer

L. Larcher, G. Bersuker, D. S. Ang, 2010, 2010 IEEE International Reliability Physics Symposium.

Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement

R. Jammy, P. D. Kirsch, K. Matthews, 2012, 2012 International Electron Devices Meeting.