T. Fischer

Dynamic state-retention flip flop for fine-grained sleep-transistor scheme

D. Schmitt-Landsiedel, M. Fulde, M. Eireiner, 2005, Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005..

A 65nm test structure for the analysis of NBTI induced statistical variation in SRAM transistors

D. Schmitt-Landsiedel, K. Hofmann, M. Ostermayr, 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.

A 65 nm test structure for SRAM device variability and NBTI statistics

Doris Schmitt-Landsiedel, Martin Ostermayr, Karl Hofmann, 2009, ESSDERC 2009.