I. P. Soshnikov

发表

Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence

N. N. Ledentsov, N. V. Kryzhanovskaya, V. A. Shchukin, 2006, SPIE OPTO.

High external differential efficiency and high optical gain of long-wavelength quantum dot diode laser

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2003 .

3.9 W CW power from sub-monolayer quantum dot diode laser

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 1999 .

High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

D. A. Livshits, A. R. Kovsh, D. Bimberg, 2002 .

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2000 .

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface

D. Bimberg, B. R. Semyagin, V. V. Preobrazhenskii, 2002 .

0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Mikhail V. Maximov, A. R. Kovsh, Dieter Bimberg, 2000 .

Near-threshold sputtering of

I. P. Soshnikov, A. Shakhmin, N. A. Bert, 1999 .

Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

N. V. Kryzhanovskaya, O. M. Gorbenko, I. P. Soshnikov, 2004 .

Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs

O. M. Gorbenko, I. P. Soshnikov, N. Ledentsov, 2001 .

The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy

N. V. Sibirev, I. P. Soshnikov, V. Ustinov, 2005 .

Copper nanopattern on SiO2 from sputter etching a Cu∕SiO2 interface

I. P. Soshnikov, S. Dew, M. Stepanova, 2005 .

Photoluminescence and the structure of heterointerfaces of (311)A-and (311)B-oriented GaAs/AlAs superlattices

I. P. Soshnikov, N. Ledentsov, V. Ustinov, 2002 .

Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix

N. V. Kryzhanovskaya, I. P. Soshnikov, N. Ledentsov, 2003 .

Entropy‐Driven Effects in Self‐Organized Formation of Quantum Dots

I. P. Soshnikov, N. Ledentsov, V. Ustinov, 2001 .

Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition

I. P. Soshnikov, N. Ledentsov, A. Zhukov, 1999 .

Influence of a predeposited Si1−xGex layer on the growth of self-assembled SiGe/Si(001) islands

D. N. Lobanov, O. M. Gorbenko, I. P. Soshnikov, 2005 .

Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

N. V. Kryzhanovskaya, O. M. Gorbenko, I. P. Soshnikov, 2004 .

Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

I. P. Soshnikov, A. V. Osipov, E. Nikitina, 2016 .

Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters

I. P. Soshnikov, N. Ledentsov, D. Gerthsen, 2005 .

Terahertz electroluminescence of surface plasmons from nanostructured InN layers

I. P. Soshnikov, Xiaodong Wang, V. Shalygin, 2010 .

The formation of ZnO-based coatings from solutions containing high-molecular polyvinylpyrrolidone

I. P. Soshnikov, A. Khrebtov, S. K. Evstrop’ev, 2016 .

Sputtering of A3B5 materials (GaP, GaAs, GaSb, InP, and InSb) by 2-to 14-keV N2+ ions

I. P. Soshnikov, N. A. Bert, 2000 .

Sputtering of AlxGa1−xAs semiconductor targets by Ar+ ions with energies of 2–14 keV

I. P. Soshnikov, N. Berg, 1997 .

Lasing in Vertical Direction in Structures with InGaN Quantum Dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

QD lasers: physics and applications

Matthias Kuntz, Friedhelm Hopfer, P. Werner, 2005, SPIE/OSA/IEEE Asia Communications and Photonics.

Structure and photoluminescence study of type-II GaAs quantum wires and dots grown on nano-faceted (3 1 1)A surface

I. P. Soshnikov, D. Gerthsen, N. Ledentsov, 2004 .

Optical properties of InAs quantum dots in a Si matrix

G. E. Cirlin, I. P. Soshnikov, N. Ledentsov, 1999 .

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Formation of GaAsN nanoinsertions in a GaN matrix

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2001 .

Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces

V. V. Preobrazhenski, I. P. Soshnikov, N. Ledentsov, 2002 .

Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix

V. A. Semenov, I. P. Soshnikov, I. Krestnikov, 1999 .

The formation of developed morphology on the indium phosphide surface by ion argon beam sputtering

O. M. Gorbenko, I. P. Soshnikov, M. Kulagina, 2001 .

Sputtering characteristics of fullerene C60 films under bombardment with 0.1–1-keV argon ions and atoms

I. P. Soshnikov, A. Lunev, V. Barchenko, 2000 .

Quantum wires and quantum dots on corrugated (311) surfaces: potential applications in optoelectronics

Dieter Bimberg, D. Gerthsen, Nikolai N. Ledentsov, 2002, SPIE OPTO.

Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces

D. Bimberg, D. Gerthsen, I. P. Soshnikov, 2001 .

Temperature profile along a nanowhisker growing in high vacuum

I. P. Soshnikov, V. Dubrovskii, N. V. Sibirev, 2006 .

Self-Assembled Formation of Quantum Dots During InGaAlAs Quantum Well Growth

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 1998 .

Nanofaceting and alloy decomposition: From basic studies to advanced photonic devices

V. A. Shchukin, Dieter Bimberg, N. V. Kryzhanovskaya, 2006, Microelectron. J..