Romain Delhougne

In Depth Analysis of 3D NAND Enablers in Gate Stack Integration and Demonstration in 3D Devices

Chi Lim Tan, Simone Lavizzari, Pieter Blomme, 2017, 2017 IEEE International Memory Workshop (IMW).

Process-induced charging damage in IGZO nTFTs

Katia Devriendt, Lieve Teugels, Romain Delhougne, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices

Laura Nyns, Romain Delhougne, Gouri Sankar Kar, 2021 .

Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications

Wim Dehaene, Jérôme Mitard, Romain Delhougne, 2021, ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).

Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices

Wilfried Vandervorst, K. De Meyer, Romain Delhougne, 2004 .

On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors

Eddy Simoen, C. Claeys, K. De Meyer, 2005 .

Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer

Wilfried Vandervorst, Roger Loo, Romain Delhougne, 2004 .