Antonio Arreghini

In Depth Analysis of 3D NAND Enablers in Gate Stack Integration and Demonstration in 3D Devices

Chi Lim Tan, Simone Lavizzari, Pieter Blomme, 2017, 2017 IEEE International Memory Workshop (IMW).

Impact of Mechanical Stress on the Electrical Performance of 3D NAND

I. De Wolf, Antonio Arreghini, Arnaud Furnemont, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Innovative schemes to improve reliability and density of horizontal and vertical channel 3D Flash

Antonio Arreghini, Geert Van den bosch, Jan Van Houdt, 2013, 2013 5th IEEE International Memory Workshop.

Assessment methodology of the lateral migration component in data retention of 3D SONOS memories

Lifang Liu, Geert Van den bosch, Liyang Pan, 2014, Microelectron. Reliab..

Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices

Andrea L. Lacaita, J. Van Houdt, Antonio Arreghini, 2012 .

In Depth Analysis of Post-Program VT Instability after Electrical Stress in 3D SONOS Memories

Dimitri Linten, Robin Degraeve, Antonio Arreghini, 2016, 2016 IEEE 8th International Memory Workshop (IMW).

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Eddy Simoen, Philippe Roussel, Guido Groeseneken, 2010 .

Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling

Robin Degraeve, J. Van Houdt, Pieter Blomme, 2015 .

Role of holes and electrons during erase of TANOS memories: Evidences for dipole formation and its impact on reliability

Malgorzata Jurczak, Antonio Arreghini, Geert Van den bosch, 2010, 2010 IEEE International Reliability Physics Symposium.