V. Kumari

Laterally-asymmetric-channel-insulated-shallow-extension-silicon-on-nothing LAC-ISE-SON MOSFET for improved reliability and digital circuit simulation

V. Kumari, M. Saxena, R. S. Gupta, 2012, 2012 International Conference on Devices, Circuits and Systems (ICDCS).

Two-Dimensional Analytical Drain Current Model for Double-Gate MOSFET Incorporating Dielectric Pocket

V. Kumari, M. Saxena, R. S. Gupta, 2012, IEEE Transactions on Electron Devices.