W. Ha

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration

E. Augendre, M. Urteaga, B. Brar, 2009, 2009 IEEE International SOI Conference.

High performance InP HEMT technology with multiple interconnect layers for advanced RF and mixed signal circuits

Z. Griffith, M. Urteaga, W. Ha, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

Monolithic integration of InP-based transistors on Si substrates using MBE

T. E. Kazior, Bobby Brar, Dmitri Lubyshev, 2009 .

Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m

J.S. Harris, W. Ha, S. Bank, 2002, IEEE Photonics Technology Letters.

Progress and challenges in the direct monolithic integration of III–V devices and Si CMOS on silicon substrates

E. Augendre, J. M. Fastenau, M. Urteaga, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

Integrated semiconductor vertical-cavity surface-emitting lasers and PIN photodetectors for biomedical fluorescence sensing

J.S. Harris, O. Levi, W. Ha, 2004, IEEE Journal of Quantum Electronics.

50-nm E-mode In0.7Ga0.3As PHEMTs on 100-mm InP substrate with fmax > 1 THz

Peter Chen, Miguel Urteaga, Berinder Brar, 2010, 2010 International Electron Devices Meeting.

A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

E. Augendre, J. M. Fastenau, M. Urteaga, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.