B. Z. Nosho

Status of two-color and large format HgCdTe FPA technology at Raytheon Vision Systems

T. J. De Lyon, R. E. Bornfreund, J. W. Bangs, 2006, SPIE OPTO.

Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications

William W. Bewley, Jerry R. Meyer, Walter Kruppa, 1999, Optics & Photonics.

Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations

W. H. Weinberg, Luis A. Zepeda-Ruiz, Dimitrios Maroudas, 1999 .

Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition

W. H. Weinberg, Brian R. Bennett, William Barvosa-Carter, 1999 .

MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates

J. D. Benson, R. N. Jacobs, P. R. Patterson, 2010 .

Effects of As2 versus As4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability

Brian R. Bennett, Lloyd J. Whitman, B. Z. Nosho, 2001 .

Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices

Jerry R. Meyer, Hao Lee, Ramon U. Martinelli, 2002 .