M. C. Maher

发表

Single Event Upset and Latchup Considerations for CMOS Devices Operated at 3.3 Volts

R. Koga, K. B. Crawford, W. R. Crain, 1998 .

Radiation design test data for advanced CMOS product

M. C. Maher, 1992, Workshop Record 1992 IEEE Radiation Effects Data Workshop.

Laser-induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators

Stephen LaLumondiere, R. Koga, P. Yu, 2002 .

Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs

R. L. Pease, Barney Lee Doyle, Daniel M. Fleetwood, 2002 .

SEU and latchup tolerant advanced CMOS technology

R. Koga, K. B. Crawford, S. H. Penzin, 1990 .

Hardness assurance implications of bimodal total dose response in a bipolar linear voltage comparator

R. L. Pease, Ronald D. Schrimpf, Hugh J. Barnaby, 1999 .

Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response

R. L. Pease, T. L. Turflinger, Ronald D. Schrimpf, 1999 .

Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions

Stephen LaLumondiere, R. Koga, Steven C. Moss, 1997 .

Total-dose hardening of a bipolar-voltage comparator

R. L. Pease, T. L. Turflinger, P. Baker, 2002 .

Origins of total-dose response variability in linear bipolar microcircuits

R. L. Pease, Ronald D. Schrimpf, Daniel M. Fleetwood, 2000 .

Passivation layers for reduced total dose effects and ELDRS in linear bipolar devices

R. L. Pease, Marty R. Shaneyfelt, J. R. Schwank, 2003 .