Yuko Utsunomiya

11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology

Ying Yu, Masahide Matsumoto, Minoru Yamashita, 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface

Hong Ding, Manabu Sato, Takeshi Ogawa, 2012, 2012 IEEE International Solid-State Circuits Conference.

A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface

Hong Ding, Manabu Sato, Takeshi Ogawa, 2013, IEEE Journal of Solid-State Circuits.