Jorge Kittl

发表

Source/drain formation using cobalt silicide as diffusion source for deep submicron nMOS

Ih-Chin Chen, J. C. Hu, Q. Z. Hong, 1998, Advanced Lithography.

Study Of Integration Issues Of Ti Salicide Process With Preamorphization For Sub-0.18 /spl mu/m Gate Length CMOS Technologies

Ih-Chin Chen, G. A. Dixit, Q. Z. Hong, 1997, Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.

A model-based approach for process design and its application to the titanium salicide process

S. Rao, Sharad Saxena, Jorge Kittl, 1998 .

The Flash Memory Cell for the Nodes to Come: Material Requirements from a Device Perspective

Malgorzata Jurczak, Dirk Wellekens, Pieter Blomme, 2009 .

A Shallow-'ikench Isolation Study For 0.18pm Cmos Technology With Emphasis On The Effects Of Well Design, Channel-stop Implants, Trenchl Depth, And Salicide Process

Ih-Chin Chen, Jorge Kittl, Ajith Amerasekera, 1997, Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.

Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems

Dirk Wouters, Malgorzata Jurczak, Jorge Kittl, 2013 .

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Jorge Kittl, Bob De Schutter, Christophe Detavernier, 2011 .

Process Modeling and Integration of The Salicide Process Module for Sub-Half Micron Technology.

Jorge Kittl, P. P. Apte, Douglas A. Prinslow, 1995 .

Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems

Luigi Pantisano, Dirk Wouters, Malgorzata Jurczak, 2011 .

Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon

Karen Maex, Hugo Bender, Jorge Kittl, 2007 .

Ni silicide morphology on small features

Karen Maex, Jorge Kittl, Muriel de Potter de ten Broeck, 2004 .

Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell

Dirk Wouters, Robin Degraeve, Malgorzata Jurczak, 2011, 2011 3rd IEEE International Memory Workshop (IMW).

Effects of alloying on properties of NiSi for CMOS applications

Karen Maex, Jorge Kittl, J. Kittl, 2004 .

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

Iuliana Radu, Malgorzata Jurczak, Hugo Bender, 2012 .

High-k dielectrics for future generation memory devices (Invited Paper)

Christoph Adelmann, Ben Kaczer, Dirk Wouters, 2009 .

Vanadium Dioxide as a Memory Material

Iuliana Radu, Stefan De Gendt, Marc Heyns, 2011 .

Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers

B. Kaczer, Dirk Wouters, Jorge Kittl, 2009 .

Towards barrier height modulation in HfO2/TiN by oxygen scavenging - Dielectric defects or metal induced gap states?

L. Pantisano, Dirk Wouters, Malgorzata Jurczak, 2011 .

Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth

Karen Maex, Wilfried Vandervorst, Jorge Kittl, 2004 .

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Dirk Wouters, Robin Degraeve, Malgorzata Jurczak, 2011 .