Mark S. Rodder

发表

Source/drain formation using cobalt silicide as diffusion source for deep submicron nMOS

Ih-Chin Chen, J. C. Hu, Q. Z. Hong, 1998, Advanced Lithography.

Shallow source/drain extension formation using antimony and indium pre-amorphization schemes for 0.18- to 0.13-μm CMOS technologies

Ih-Chin Chen, J. C. Hu, Mark S. Rodder, 1997, Advanced Lithography.

Shallow p-type source/drain extension formation using B2H6 plasma doping for deep submicron CMOS

Ih-Chin Chen, J. C. Hu, Mark S. Rodder, 1998, Advanced Lithography.

Prediction of 0.18 um CMOS technology performance using tuned device simulation

Ih-Chin Chen, Mark S. Rodder, Mahalingam Nandakumar, 1995, Advanced Lithography.

An 8 ns BiCMOS 1 Mb ECL SRAM with a configurable memory array size

Richard A. Chapman, Hiep V. Tran, Mark S. Rodder, 1989, IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers.

A 0.5- mu m BiCMOS technology for logic and 4 Mbit-class SRAMs

Richard A. Chapman, Hiep V. Tran, Mark S. Rodder, 1989, International Technical Digest on Electron Devices Meeting.

Pass transistor and isolation design methodology and its implementation for improved manufacturability for 256-Mbit DRAM and beyond

Amitava Chatterjee, Ih-Chin Chen, Mark S. Rodder, 1996, Advanced Lithography.

New methodology of simulating pocket-implanted sub-0.18-μm CMOS

Amitava Chatterjee, Ih-Chin Chen, J. C. Hu, 1998, Advanced Lithography.

A transistor performance figure-of-merit including the effect of gate resistance and its application to scaling to sub-0.25-/spl mu/m CMOS logic technologies

Amitava Chatterjee, Ih-Chin Chen, Mark S. Rodder, 1998 .

A device design study of 0.25 /spl mu/m gate length CMOS for 1 V low power applications

Ih-Chin Chen, Mark S. Rodder, Mahalingam Nandakumar, 1995, 1995 IEEE Symposium on Low Power Electronics. Digest of Technical Papers.

Feasibility study to determine the suitability of using TiN/W and Si1-xGex as alternative gate materials for sub-0.1-μm gate-length PMOS devices

Ih-Chin Chen, J. C. Hu, Mark S. Rodder, 1998, Advanced Lithography.

A study of design/process dependence of 0.25 /spl mu/m gate length CMOS

Ih-Chin Chen, Mark S. Rodder, Ajith Amerasekera, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Low voltage stress-induced-leakage-current in ultrathin gate oxides

Robert M. Wallace, Mark S. Rodder, Sunil V. Hattangady, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond

Jongwook Jeon, Sun-Ghil Lee, Mark S. Rodder, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

A pass transistor design methodology for 256 Mbit DRAM and beyond

Amitava Chatterjee, Ih-Chin Chen, Mark S. Rodder, 1994, Proceedings of 1994 VLSI Technology Symposium.

Substrate triggering and salicide effects on ESD performance and protection circuit design in deep submicron CMOS processes

Charvaka Duvvury, Mark S. Rodder, Ajith Amerasekera, 1995, Proceedings of International Electron Devices Meeting.